Abstract: In general, the present invention relates to identification of lipidome biomarkers for cancer analysis and it provides prognostic and predictive methods and kits for cancer diagnosis and subtyping and for diagnosing and/or predicting the evolution of a tumor and its response to lipid metabolism-targeted or other types of therapy in a subject, by making use of phospholipid (PL) profiling, wherein changes in the combined acyl chain length of intact body fluid-derived or tumor-derived phospholipid species is indicative of an elongation phenotype.

Abstract: A method for determining myocardial inotropic state is described. The method involves receiving a value of stretch for different myocardial segments during passive filling, e.g. atrial contraction, and receiving associated values representative of total systolic strain. The method also involves using a relationship between the stretch of different myocardial segments during atrial contraction and the associated values representative for total systolic strain as an index of the myocardial inotropic state. A corresponding system and computer program product also is described.

Abstract: A method for forming a nanostructure penetrating a layer and the device made thereof is disclosed. In one aspect, the device has a substrate, a layer present thereon, and a nanostructure penetrating the layer. The nanostructure defines a nanoscale passageway through which a molecule to be analyzed can pass through. The nanostructure has, in cross-sectional view, a substantially triangular shape. This shape is particularly achieved by growth of an epitaxial layer having crystal facets defining tilted sidewalls of the nanostructure. It is highly suitably for use for optical characterization of molecular structure, particularly with surface plasmon enhanced transmission spectroscopy.

Abstract: A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration.

Abstract: The present invention relates to methods and materials able to confer an increased tolerance or resistance to oxidative stress in cells or organisms. In particular, the present invention provides peptides possessing pharmacological or biotherapeutic activity and nucleic acids encoding said peptides which can be used to improve the tolerance of a microbial or eukaryotic cell to oxidative stress, to confer oxidative stress tolerance to an organism when transfected herein, or for the treatment and the prophylaxis of a wide range of oxidative stress-related pathologies in mammals, including humans, particularly mitochondrial dysfunction related disorders.

Abstract: A method for determining an active dopant concentration profile of a semiconductor substrate based on optical measurements is disclosed. The active dopant concentration profile includes a concentration level and a junction depth. In one aspect, the method includes obtaining a photomodulated reflectance (PMOR) amplitude offset curve and a PMOR phase offset curve for the semiconductor substrate based on PMOR measurements, determining a decay length parameter based on a first derivative of the amplitude offset curve, determining a wavelength parameter based on a first derivative of the phase offset curve, and determining, from the decay length parameter and the wavelength parameter, the concentration level and the junction depth of the active dopant concentration profile.

Abstract: A nonvolatile memory device is disclosed comprising a metal-to-insulator transition material thermally coupled to a Peltier element. During programming, a selected current is flowing through the Peltier element, the level thereof determining whether the temperature of the Peltier element and hence of the thermally coupled metal-to-insulator transition material decreases or increases. In response to this temperature change, the metal-to-insulator transition material will change from one electrical conduction phase to another. The memory device is read by applying current through the metal-to-insulator transition material, the current level being selected to maintain the phase of the metal-to-insulator transition material.

Abstract: A complementary logic technology is disclosed whereby a logic gate comprises at least two metal-to-insulator transition (MIT) elements and at least two thermoelectric elements, each MIT element being thermally coupled to a corresponding thermoelectric element. In logic gates, each electric signal at an input terminal of a logic gate is first converted into two complementary thermal signals, and these thermal signals in turn determine the status of the output terminal of the logic gate, thereby generating an electrical output signal inverse to the electrical input signal or an output signal which is a Boolean operation on input signals. The parallel connection(s) of thermoelectric elements of the logic gate is used to create corresponding thermal signals for each electrical input signal. The MIT elements of the logic gate are then arranged to, in response to the associated thermal signals, execute a Boolean operation.

Abstract: A method of manufacturing a semiconductor device is disclosed. In one aspect, the method includes: forming a dummy gate over a substrate layer; forming first gate insulating spacers adjacent to sidewalls of the dummy gate and over the substrate layer, the first spacers having two sidewalls and two surface profiles where the sidewalls meet the substrate layer; forming a source and drain region using the surface profiles; forming second gate insulating spacers adjacent to the sidewalls of the first spacers and over the source and drain regions; removing the dummy gate and the first spacers, thereby forming a first recess; depositing a dielectric layer in the first recess along the side walls of the second spacers and over the substrate layer, thereby forming a second recess; and depositing a gate electrode in the second recess.

Abstract: A method for measuring a concentration of a biogenic substance in a living body includes steps of: preparing an apparatus including a light source, a substrate which has periodic metal structures and generates surface enhanced Raman scattering light by being irradiated with light from the light source, and spectroscopic means which disperses and detects the light, wherein the periodic metal structure is arranged with first and second distances in first and second direction respectively, the first distance is set to generate surface plasmon by matching a phase of the light from the light source, and the second distance is smaller than the first distance and is set between 300 nm and 350 nm; irradiating the substrate with the light from the light source to generate the surface enhanced Raman scattering; detecting the scattering with the spectroscopic means; and calculating the concentration of the biogenic substance based on the scattering.

Abstract: An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.

Abstract: The present system and method relate to a system for performing a multiplication. The system is arranged for receiving a first data value, and comprises means for calculating at run time a set of instructions for performing a multiplication using the first data value, storage means for storing the set of instructions calculated at run time, multiplication means arranged for receiving a second data value and at least one instruction from the stored set of instructions and arranged for performing multiplication of the first and the second data values using the at least one instruction.

Abstract: The disclosure relates to an n-channel laterally diffused metal-oxide-semiconductor device comprising an n+ source (11) in a p-well region (12) and an n+ drain (21) in an n-well region (22), an n-channel (14) extending between the n+ source (11) and the n-well region (22), and a poly gate (3) having a first part (31) above the channel and spanning the entire channel and a second part (32) extending above a part (24) of the n-well region (22) for forming a gate-to-n-well-overlap. The poly gate (3) is a hybrid n+/p+ structure wherein the first part (31) is an n+ part and the second part (32) is a p+ part.

Abstract: A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.

Abstract: The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the base layer; one or more interconnect structures, each of said structures comprising: a via filled with an electrically conductive material, said via running through the complete thickness of the base layer, thereby forming an electrical connection between said front side and back side surfaces of the base layer, and on the back side surface of the base layer: a landing pad and a micro-bump in electrical connection with said filled via; characterized in that the backside surface of said base layer comprises one or more isolation ring trenches each of said trenches surrounding one or more of said interconnect structures. The disclosure is equally related to methods for producing said substrates and stacks of substrates.

Abstract: The present disclosure is related to a selector device for memory applications. The selector device for selecting a memory element in a memory array comprises an MIT element and a decoupled heater, thermally linked to the MIT element. The MIT element comprises a MIT material component and a barrier component and is switchable from a high to a low resistance state by heating the MIT element above a transition temperature with the decoupled heater. The barrier component is provided to increase the resistance of the MIT element in the high resistance state.

Abstract: A micro-fluidic device is described. The micro-fluidic device includes a semiconductor substrate; at least one micro-reactor in the semiconductor substrate; one or more micro-fluidic channels in the semiconductor substrate, connected to the at least one micro-reactor; a cover layer bonded to the semiconductor substrate for sealing the one or more micro-fluidic channels; and at least one through-substrate trench surrounding the at least one micro-reactor and the one or more micro-fluidic channels.

Abstract: A method of analog beamforming in a wireless communication system is disclosed. The system has a plurality of transmit antennas and receive antennas. In one aspect, the method includes determining information representative of communication channels formed between a transmit antenna and a receive antenna of the plurality of antennas, defining a set of coefficients representing jointly the transmit and the receive beamforming coefficients, determining a beamforming cost function using the information and the set of coefficients, determining an optimized set of coefficients by exploiting the beamforming cost function, and separating the optimized set of coefficients into optimized transmit beamforming coefficients and optimized receive beamforming coefficients.