Abstract: A complementary logic technology is disclosed whereby a logic gate comprises at least two metal-to-insulator transition (MIT) elements and at least two thermoelectric elements, each MIT element being thermally coupled to a corresponding thermoelectric element. In logic gates, each electric signal at an input terminal of a logic gate is first converted into two complementary thermal signals, and these thermal signals in turn determine the status of the output terminal of the logic gate, thereby generating an electrical output signal inverse to the electrical input signal or an output signal which is a Boolean operation on input signals. The parallel connection(s) of thermoelectric elements of the logic gate is used to create corresponding thermal signals for each electrical input signal. The MIT elements of the logic gate are then arranged to, in response to the associated thermal signals, execute a Boolean operation.

Abstract: A nonvolatile memory device is disclosed comprising a metal-to-insulator transition material thermally coupled to a Peltier element. During programming, a selected current is flowing through the Peltier element, the level thereof determining whether the temperature of the Peltier element and hence of the thermally coupled metal-to-insulator transition material decreases or increases. In response to this temperature change, the metal-to-insulator transition material will change from one electrical conduction phase to another. The memory device is read by applying current through the metal-to-insulator transition material, the current level being selected to maintain the phase of the metal-to-insulator transition material.

Abstract: A method for measuring a concentration of a biogenic substance in a living body includes steps of: preparing an apparatus including a light source, a substrate which has periodic metal structures and generates surface enhanced Raman scattering light by being irradiated with light from the light source, and spectroscopic means which disperses and detects the light, wherein the periodic metal structure is arranged with first and second distances in first and second direction respectively, the first distance is set to generate surface plasmon by matching a phase of the light from the light source, and the second distance is smaller than the first distance and is set between 300 nm and 350 nm; irradiating the substrate with the light from the light source to generate the surface enhanced Raman scattering; detecting the scattering with the spectroscopic means; and calculating the concentration of the biogenic substance based on the scattering.

Abstract: An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.

Abstract: The disclosure relates to an n-channel laterally diffused metal-oxide-semiconductor device comprising an n+ source (11) in a p-well region (12) and an n+ drain (21) in an n-well region (22), an n-channel (14) extending between the n+ source (11) and the n-well region (22), and a poly gate (3) having a first part (31) above the channel and spanning the entire channel and a second part (32) extending above a part (24) of the n-well region (22) for forming a gate-to-n-well-overlap. The poly gate (3) is a hybrid n+/p+ structure wherein the first part (31) is an n+ part and the second part (32) is a p+ part.

Abstract: The present system and method relate to a system for performing a multiplication. The system is arranged for receiving a first data value, and comprises means for calculating at run time a set of instructions for performing a multiplication using the first data value, storage means for storing the set of instructions calculated at run time, multiplication means arranged for receiving a second data value and at least one instruction from the stored set of instructions and arranged for performing multiplication of the first and the second data values using the at least one instruction.

Abstract: The disclosure is related to a substrate suitable for use in a stack of interconnected substrates, comprising: a base layer having a front side and a back side surface parallel to the plane of the base layer; one or more interconnect structures, each of said structures comprising: a via filled with an electrically conductive material, said via running through the complete thickness of the base layer, thereby forming an electrical connection between said front side and back side surfaces of the base layer, and on the back side surface of the base layer: a landing pad and a micro-bump in electrical connection with said filled via; characterized in that the backside surface of said base layer comprises one or more isolation ring trenches each of said trenches surrounding one or more of said interconnect structures. The disclosure is equally related to methods for producing said substrates and stacks of substrates.

Abstract: The present disclosure is related to a selector device for memory applications. The selector device for selecting a memory element in a memory array comprises an MIT element and a decoupled heater, thermally linked to the MIT element. The MIT element comprises a MIT material component and a barrier component and is switchable from a high to a low resistance state by heating the MIT element above a transition temperature with the decoupled heater. The barrier component is provided to increase the resistance of the MIT element in the high resistance state.

Abstract: A micro-fluidic device is described. The micro-fluidic device includes a semiconductor substrate; at least one micro-reactor in the semiconductor substrate; one or more micro-fluidic channels in the semiconductor substrate, connected to the at least one micro-reactor; a cover layer bonded to the semiconductor substrate for sealing the one or more micro-fluidic channels; and at least one through-substrate trench surrounding the at least one micro-reactor and the one or more micro-fluidic channels.