Patents by Inventor Kathryn M. Kelchner

Kathryn M. Kelchner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180152004
    Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Patent number: 9917422
    Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: March 13, 2018
    Assignee: The Regents of the University of California
    Inventors: Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Patent number: 9611987
    Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: April 4, 2017
    Assignee: The Regents of the University of California
    Inventors: Kathryn M. Kelchner, James S. Speck, Nathan A. Pfaff, Steven P. DenBaars
  • Patent number: 9214333
    Abstract: Disclosed herein are methods of depositing a SiN film having a reduced wet etch rate. The methods may include adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor may then be reacted by exposing it to a plasma comprising N-containing ions and/or radicals to form a SiN film layer on the substrate, and the SiN film layer may then be densified by exposing it to a He plasma. The foregoing steps may then be repeated to form another densified SiN film layer on the substrate. Also disclosed herein are apparatuses for depositing SiN films having reduced wet etch rates on semiconductor substrates which employ the foregoing techniques.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: December 15, 2015
    Assignee: Lam Research Corporation
    Inventors: James S. Sims, Kathryn M. Kelchner, Jon Henri, Dennis M. Hausmann
  • Publication number: 20150255959
    Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.
    Type: Application
    Filed: May 26, 2015
    Publication date: September 10, 2015
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Patent number: 9076646
    Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: July 7, 2015
    Assignee: Lam Research Corporation
    Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang
  • Patent number: 9077151
    Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: July 7, 2015
    Assignee: The Regents of the University of California
    Inventors: Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, S. James Speck
  • Publication number: 20140126200
    Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.
    Type: Application
    Filed: October 29, 2013
    Publication date: May 8, 2014
    Inventors: Kathryn M. Kelchner, James S. Speck, Nathan A. Pfaff, Steven P. DenBaars
  • Publication number: 20140113457
    Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.
    Type: Application
    Filed: December 30, 2013
    Publication date: April 24, 2014
    Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang
  • Publication number: 20110216795
    Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.
    Type: Application
    Filed: March 4, 2011
    Publication date: September 8, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, S. James Speck
  • Publication number: 20110170569
    Abstract: A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
    Type: Application
    Filed: October 20, 2010
    Publication date: July 14, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Anurag Tyagi, Robert M. Farrell, Chia-Yen Huang, Po Shan Hsu, Daniel A. Haeger, Kathryn M. Kelchner, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Publication number: 20110103418
    Abstract: An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.
    Type: Application
    Filed: October 27, 2010
    Publication date: May 5, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Matthew T. Hardy, You-Da Lin, Hiroaki Ohta, Steven P. DenBaars, James S. Speck, Shuji Nakamura, Kathryn M. Kelchner