Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.