Abstract: A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to define a cleave plane. Pinholes in the lamina leave column asperities at the exfoliated surface of the donor wafer, and the beveled edge may leave an edge asperity which fails to exfoliate. To prepare the surface of the donor wafer for reuse, mechanical grinding removes the column and edge asperities, and minimal additional thickness. Following cleaning, growth and removal of an oxide layer at the surface rounds remaining peaks. The smoothed surface is well adapted to bonding to a receiver element and exfoliation of a new lamina. A variety of devices may be fabricated from the lamina, for example a photovoltaic cell.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device.

Abstract: A method is described to create a thin semiconductor lamina adhered to a ceramic body. The method includes defining a cleave plane in a semiconductor donor body, applying a ceramic mixture to a first face of the semiconductor body, the ceramic mixture including ceramic powder and a binder, curing the ceramic mixture to form a ceramic body, and cleaving a lamina from the semiconductor donor body at the cleave plane, the lamina remaining adhered to the ceramic body. Forming the ceramic body this way allows outgassing of volatiles during the curing step. Devices can be formed in the lamina, including photovoltaic devices. The ceramic body and lamina can withstand high processing temperatures. In some embodiments, the ceramic body may be conductive.

Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device.

Abstract: A method is described to create a thin semiconductor lamina adhered to a ceramic body. The method includes defining a cleave plane in a semiconductor donor body, applying a ceramic mixture to a first face of the semiconductor body, the ceramic mixture including ceramic powder and a binder, curing the ceramic mixture to form a ceramic body, and cleaving a lamina from the semiconductor donor body at the cleave plane, the lamina remaining adhered to the ceramic body. Forming the ceramic body this way allows outgassing of volatiles during the curing step. Devices can be formed in the lamina, including photovoltaic devices. The ceramic body and lamina can withstand high processing temperatures. In some embodiments, the ceramic body may be conductive.

Abstract: A semiconductor donor body such as a wafer is implanted with ions to form a cleave plane. The donor wafer is affixed to a polyimide receiver element, for example by applying polyimide in liquid form to the donor wafer, then curing, or by affixing the donor wafer to a preformed polyimide sheet. Annealing causes a lamina to cleave from the donor wafer at the cleave plane. The resulting adhered lamina and polyimide body are not adhered to another rigid substrate and can be jointly flexed.

Abstract: A semiconductor donor body such as a wafer is implanted with ions to form a cleave plane. The donor wafer is affixed to a polyimide receiver element, for example by applying polyimide in liquid form to the donor wafer, then curing, or by affixing the donor wafer to a preformed polyimide sheet. Annealing causes a lamina to cleave from the donor wafer at the cleave plane. The resulting adhered lamina and polyimide body are not adhered to another rigid substrate and can be jointly flexed.

Abstract: In a capacitive membrane ultrasound transducer, one or more electrodes include multiple layers of conductive or semiconductive material. The layers may be positioned adjacent an insulator or cavity in an arrangement to reduce electrical degradation. For example, a conductive layer with less work function and less resistivity is spaced from an insulator by a conductive layer with more work function and more resistivity. The different layers of electrode material may provide for less electrical degradation due to the type of material used and relative location.

Abstract: A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to define a cleave plane. Pinholes in the lamina leave column asperities at the exfoliated surface of the donor wafer, and the beveled edge may leave an edge asperity which fails to exfoliate. To prepare the surface of the donor wafer for reuse, mechanical grinding removes the column and edge asperities, and minimal additional thickness. Following cleaning, growth and removal of an oxide layer at the surface rounds remaining peaks. The smoothed surface is well adapted to bonding to a receiver element and exfoliation of a new lamina. A variety of devices may be fabricated from the lamina, for example a photovoltaic cell.

Abstract: In a capacitive membrane ultrasound transducer, one or more electrodes include multiple layers of conductive or semiconductive material. The layers may be positioned adjacent an insulator or cavity in an arrangement to reduce electrical degradation. For example, a conductive layer with less work function and less resistivity is spaced from an insulator by a conductive layer with more work function and more resistivity. The different layers of electrode material may provide for less electrical degradation due to the type of material used and relative location.

Abstract: A fastener for coupling a trim panel to a support member includes a mounting grommet with a funnel-shaped receiver communicating with an aperture for receiving one end of a fastener pin having a plurality of spaced annular ratcheting grooves formed thereon. The opposite or second end of the pin includes a pointed end with a pair of resilient locking arms, which extend divergently outwardly and away from an apex of the second end of the pin at an acute angle and at a spacing of about 180°, for insertion into an aperture of a support structure. Interposed between the first and second ends of the fastening pin is a resilient, generally cup-shaped seal which engages a surface of the support structure opposite the locking arms for providing a seal surrounding the aperture in the support structure to which the fastening pin is inserted. The grommet includes an annular slot defined by a collar on one side and a shoulder of the funnel-shaped receiver on the other.

Abstract: A method for processing a plurality of mirror assemblies formed together from a silicon wafer. The method includes the steps of exposing the mirror assemblies to an acid release etch to produce released mirror assemblies and rinsing the released mirror assemblies to produce washed mirror assemblies. The washed mirror assemblies are dried to produce dried mirror assemblies and the dried mirror assemblies are mounted onto a mounting tape to produce mounted mirror assemblies. The mounted mirror assemblies are diced or scribed to produce a plurality of separated mirror assemblies, which are separated from the mounting tape so as to produce a plurality of discrete mirror assemblies.

Abstract: A method for manufacturing a magneto-optical data storage system. The method includes the steps of providing a support surface and rotatably mounting a magneto-optical disk having a planar storage surface with a plurality of concentrically disposed data tracks onto the support surface. A proximal extremity of an arm is pivotably mounted on the support surface so that a distal extremity of the arm pivots between first and second positions relative to the storage surface. An optical light emitter and receiver emitting a laser beam is carried by the distal extremity of the arm. A flying magneto-optical head is mounted on the distal extremity of the arm. A mirror assembly is attached to the head. The mirror of the mirror assembly can be rocked between first and second positions for reflecting the laser beam between the optical light emitter and receiver and the storage surface of the magneto-optical disk so as to permit the optical recording and/or reading of information on the storage surface.

Abstract: A transducer has tapered piezoelectric layer sides in order to reduce the sidelobe levels. In addition, matching layers disposed on the piezoelectric layer may similarly be tapered to further increase performance. Alternative to tapering the piezoelectric layer, the top electrode and/or the matching layers may be reduced in size relative to the piezoelectric layer such that they generate a wave which destructively interferes with the undesirable lateral wave. There are also described methods for manufacturing a reduced sidelobe transducer.