Patents by Inventor Katie H. Pentas

Katie H. Pentas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming plasma enhanced deposited, fully oxidized PSG film
    Patent number: 7223706
    Abstract: A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si—O—Si bond peak absorbance in the IR spectrum of at least 1092 cm?1.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: May 29, 2007
    Assignee: Intersil Americas, Inc.
    Inventors: Katie H. Pentas, Mark D. Bordelon, Jack H. Linn