Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Abstract: In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Abstract: In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Abstract: A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.

Abstract: A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.