Patents by Inventor Katrin Blum

Katrin Blum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structure
    Patent number: 7307336
    Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.
    Type: Grant
    Filed: December 6, 2002
    Date of Patent: December 11, 2007
    Assignee: IHP GmbH - Innovations for High Performance Microelectronic / Institut fur innovative Mikroelektronik
    Inventors: Karl-Ernst Ehwald, Alexander Fox, Dieter Knoll, Bernd Heinemann, Steffen Marschmayer, Katrin Blum
  • Bicmos structure, method for producing the same and bipolar transistor for a bicmos structure
    Publication number: 20050006724
    Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.
    Type: Application
    Filed: December 6, 2002
    Publication date: January 13, 2005
    Inventors: Karl-Ernst Ehwald, Alexander Fox, Dieter Knoll, Bernd Heinemann, Steffen Marschmayer, Katrin Blum