Abstract: A semiconductor assembly includes a substrate including a metal die attach surface, a semiconductor die that is arranged on the substrate, the semiconductor die being configured as a power semiconductor device and comprising a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack comprising a front side metallization and a contaminant protection layer that is between the front side metallization and the semiconductor body, and a diffusion soldered joint between the metal die attach surface and the rear side metallization, the diffusion soldered joint comprising one or more intermetallic phases throughout the diffusion soldered joint, wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body.

Abstract: A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization.

Abstract: A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization, and wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body after the soldering process is completed.

Abstract: The invention relates to a method for investigating a structure and a structure for receiving and/or conducting a liquid or soft medium, the method comprising the steps of: a) exciting acoustic waves in the structure by means of at least one transmitter, b) converting at least a part of the energy associated with the acoustic waves (A) excited in the structure into volume sound waves of the medium, c) reconverting at least a part of the energy associated with the volume sound waves into acoustic wave energy of the structure thereby generating acoustic waves in the structure, d) receiving acoustic waves evoked by the transmitter by at least one receiver, and e) verifying whether a coating is present on a surface of the structure and/or if a coating is present determining properties of the coating by evaluating a signal generated by the receiver upon receipt of acoustic waves evoked by the transmitter and/or verifying whether a level of the medium (5) is below a predetermined value.

Abstract: The invention relates to a method for investigating a structure and a structure for receiving and/or conducting a liquid or soft medium, the method comprising the steps of: a) exciting acoustic waves in the structure by means of at least one transmitter, b) converting at least a part of the energy associated with the acoustic waves (A) excited in the structure into volume sound waves of the medium, c) reconverting at least a part of the energy associated with the volume sound waves into acoustic wave energy of the structure thereby generating acoustic waves in the structure, d) receiving acoustic waves evoked by the transmitter by at least one receiver, and e) verifying whether a coating is present on a surface of the structure and/or if a coating is present determining properties of the coating by evaluating a signal generated by the receiver upon receipt of acoustic waves evoked by the transmitter and/or verifying whether a level of the medium (5) is below a predetermined value.

Abstract: The conversion of the achiral meso form of an ansa-metallocene complex into the chiral rac form is carried out photochemically in the presence of a chiral auxiliary reagent.

Abstract: In a process for converting the achiral meso form or the racemate of an ansa-metallocene complex or a mixture thereof into one of its enantiomers, the conversion is carried out photochemically in the presence of an enantiomerically pure auxiliary reagent.