Abstract: A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Abstract: A semiconductor substrate includes a support substrate, a mask pattern located above the support substrate and including a mask portion, a seed portion locally located in a layer above the support substrate in a plan view, and a semiconductor part including a GaN-based semiconductor and located above the mask pattern to be in contact with the seed portion and the mask portion.

Abstract: According to an aspect of the invention, there is provided a photovoltaic system including: a power generation module including at least one power generation section configured to convert energy of light to electrical power, and a power storage module including a plurality of power storage devices configured to store the electrical power converted by the power generation section. The power generation module and the power storage module are connected in parallel. In the power storage module, the plurality of power storage devices is connected in series. And, number of the power storage devices is larger than number of the power generation sections.

Abstract: A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Abstract: A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.

Abstract: A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Abstract: A method for manufacturing a semiconductor device in which a first hole and a second hole having a lower aspect ratio than the first hole are formed in an insulating film formed on a semiconductor substrate is provided. The method includes: performing a first etching process configured to etch the insulating film; and performing a second etching process configured to etch the insulating film. The second etching process is performed under a condition that deposition rate of a deposited layer formed on a surface of the insulating film is lower than that in the first etching process.

Abstract: A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.

Abstract: There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Abstract: A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Abstract: A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide