Patents by Inventor Katsuaki Masaki

Katsuaki Masaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10862264
    Abstract: A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: December 8, 2020
    Assignee: KYOCERA Corporation
    Inventors: Youji Furukubo, Sentaro Yamamoto, Masanori Okamoto, Katsuaki Masaki, Takehiro Nishimura, Kazuya Shibata
  • Patent number: 10443149
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 15, 2019
    Assignee: KYOCERA Corporation
    Inventors: Chiaki Domoto, Yutaka Kuba, Katsuaki Masaki, Yuuichiro Hayashi
  • Publication number: 20190131765
    Abstract: A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.
    Type: Application
    Filed: April 18, 2017
    Publication date: May 2, 2019
    Applicant: KYOCERA Corporation
    Inventors: Youji FURUKUBO, Sentaro YAMAMOTO, Masanori OKAMOTO, Katsuaki MASAKI, Takehiro NISHIMURA, Kazuya SHIBATA
  • Patent number: 10151045
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: December 11, 2018
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20180171506
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Application
    Filed: January 18, 2018
    Publication date: June 21, 2018
    Inventors: Katsuaki MASAKI, Yutaka KUBA, Chiaki DOMOTO, Daisuke UEYAMA, Yuichiro HAYASHI
  • Patent number: 9890470
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: February 13, 2018
    Assignee: KYOCERA Corporation
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
  • Publication number: 20180016703
    Abstract: A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.
    Type: Application
    Filed: January 26, 2016
    Publication date: January 18, 2018
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
  • Publication number: 20170370018
    Abstract: The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.
    Type: Application
    Filed: January 19, 2016
    Publication date: December 28, 2017
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA
  • Publication number: 20170342592
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 30, 2017
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Yutaka KUBA, Daisuke UEYAMA, Kouji MIYAMOTO, Yuuichiro HAYASHI
  • Patent number: 9777396
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: October 3, 2017
    Assignee: KYOCERA CORPORATION
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Publication number: 20170170279
    Abstract: A silicon carbide crystal ingot includes first crystal layers and second crystal layers, each being alternately disposed and all containing one of a donor and acceptor, wherein a concentration of the donor or the acceptor that at least one of the second crystal layers has is higher than a concentration of the donor or the acceptor that one of the first crystal layers has, the one of the first crystal layers being in contact with the at least one of the second crystal layers.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 15, 2017
    Inventors: Chiaki DOMOTO, Katsuaki MASAKI, Kazuya SHIBATA, Shigehiko YAMAGUCHI, Daisuke UEYAMA
  • Publication number: 20160340795
    Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.
    Type: Application
    Filed: January 29, 2015
    Publication date: November 24, 2016
    Applicant: KYOCERA Corporation
    Inventors: Chiaki DOMOTO, Yutaka KUBA, Katsuaki MASAKI, Yuuichiro HAYASHI
  • Publication number: 20150211147
    Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.
    Type: Application
    Filed: July 26, 2013
    Publication date: July 30, 2015
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
  • Publication number: 20150068444
    Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.
    Type: Application
    Filed: April 26, 2013
    Publication date: March 12, 2015
    Applicant: KYOCERA CORPORATION
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto
  • Publication number: 20150020730
    Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 22, 2015
    Inventors: Katsuaki Masaki, Yutaka Kuba, Chiaki Domoto, Daisuke Ueyama, Yuichiro Hayashi
  • Publication number: 20140299046
    Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.
    Type: Application
    Filed: October 29, 2012
    Publication date: October 9, 2014
    Applicant: KYOCERA Corporation
    Inventors: Chiaki Domoto, Katsuaki Masaki, Yutaka Kuba, Daisuke Ueyama, Kouji Miyamoto, Yuuichiro Hayashi
  • Patent number: 8796718
    Abstract: A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: August 5, 2014
    Assignee: Kyocera Corporation
    Inventors: Katsuaki Masaki, Yoshiyuki Kawaguchi, Kazuhiro Nishizono
  • Publication number: 20120187442
    Abstract: A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.
    Type: Application
    Filed: September 29, 2010
    Publication date: July 26, 2012
    Applicant: KYOCERA CORPORATION
    Inventors: Katsuaki Masaki, Yoshiyuki Kawaguchi, Kazuhiro Nishizono
  • Publication number: 20100200881
    Abstract: A light emitting element comprises a semiconductor layer (8) in which a first conductive-type gallium nitride-based compound semiconductor layer (8a), a light emitting layer (8b) composed of a gallium nitride-based compound semiconductor, and a second conductive-type gallium nitride-based compound semiconductor layer (8c) are laminated; and a porous transparent conductive layer (20) that has a porosity becoming higher in a thickness direction thereof from a side of the semiconductor layer (8) or a transparent conductive layer (20) that has a refractive index becoming lower in a thickness direction thereof from a side of the semiconductor layer (8), the transparent conductive layer (20) being formed on a main surface of the semiconductor layer (8). By this structure, a light emitting element that enables to dramatically improve light extraction efficiency can be obtained.
    Type: Application
    Filed: March 27, 2008
    Publication date: August 12, 2010
    Applicant: KYOCERA CORPORATION
    Inventor: Katsuaki Masaki
  • Patent number: 4581063
    Abstract: A method and an apparatus for melting a metallic material in the form of a pile of elongate metal ingots, wherein the ingot pile are pre-heated in a horizontal pre-heating chamber while the pile is moved from its one end to the other end, and the pre-heated pile at the other end is pushed into a melting chamber which communicates with the pre-heating chamber and extends vertically downwardly from the other end of the pre-heating chamber, whereby the pile is turned sideways before falling down into the melting chamber, with a result of collapse of the pile into the individual metal ingots in the melting chamber.
    Type: Grant
    Filed: April 30, 1985
    Date of Patent: April 8, 1986
    Assignees: Sumitomo Light Metal Industries Ltd., Shinagawa Furnace Co., Ltd.
    Inventors: Kunio Oyabu, Toshihiko Uehara, Makoto Otani, Katsuaki Masaki, Seiji Kamimura