Abstract: Included are: an underlying substrate including a first surface; a semiconductor element layer dividable into a plurality of element portions, the semiconductor element layer being located on the first surface of the underlying substrate; and a support substrate including a second surface on which the semiconductor element layer is located, the second surface facing the first surface, the semiconductor element layer being located on the second surface. The support substrate and the semiconductor element layer include a weak portion used to divide the semiconductor element layer into the plurality of element portions.

Abstract: A method for manufacturing a semiconductor element of the present disclosure includes: a step of preparing a substrate; a first element forming step of forming a first semiconductor layer in a first region on a surface of the substrate; a first element separating step of separating the first semiconductor layer from the substrate; and a second element forming step of forming a second semiconductor layer in a second region on the surface of the substrate from which the first semiconductor layer is separated. Additionally, in the method for manufacturing a semiconductor element of the present disclosure, at least a portion of the second region overlaps the first region.

Abstract: A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S1) of forming, on an underlying substrate (11), a semiconductor element (15) connected to the underlying substrate (11) via a connecting portion (13b) and including an upper surface (15a) inclined with respect to a growth surface of the underlying substrate (11), a preparing step (S2) of preparing a support substrate (16) including an opposing surface (16c) facing the underlying substrate (11), a bonding step (S3) of pressing the upper surface (15a) of the semiconductor element (15) against the opposing surface (16c) of the support substrate (16) and heating the upper surface (15a) to bond the upper surface (15a) of the semiconductor element (15) to the support substrate (16), and a peeling step (S4) of peeling the semiconductor element (15) from the underlying substrate (11).

Abstract: The present disclosure relates to an electronic component joining method and a joined structure. A solder layer made of a gold-tin alloy including 20 mass % or greater of tin is formed on a light-emitting element side, and a layer including gold as a main component is formed, as a joining layer for joining to the solder layer, on a submount side. The solder layer and the joining layer are heated at a temperature below the melting point of the gold-tin alloy of the solder layer to join the light-emitting element and the submount.

Abstract: A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.

Abstract: The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Abstract: A silicon carbide crystal ingot includes first crystal layers and second crystal layers, each being alternately disposed and all containing one of a donor and acceptor, wherein a concentration of the donor or the acceptor that at least one of the second crystal layers has is higher than a concentration of the donor or the acceptor that one of the first crystal layers has, the one of the first crystal layers being in contact with the at least one of the second crystal layers.

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.

Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.