Patents by Inventor Katsuaki Onada

Katsuaki Onada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier diode
    Patent number: 6627967
    Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: September 30, 2003
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Tetsuro Asano, Katsuaki Onada, Yoshibumi Nakajima, Shigeyuki Murai, Hisaaki Tominaga, Koichi Hirata, Mikito Sakakibara, Hidetoshi Ishihara
  • Schottky barrier diode
    Publication number: 20030089959
    Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
    Type: Application
    Filed: July 26, 2002
    Publication date: May 15, 2003
    Applicant: Sanyo Electric Company, Ltd.
    Inventors: Tetsuro Asano, Katsuaki Onada, Yoshibumi Nakajima, Shigeyuki Murai, Hisaaki Tominaga, Koichi Hirata, Mikito Sakakibara, Hidetoshi Ishihara
  • Manufacturing method of schottky barrier diode
    Publication number: 20030060031
    Abstract: A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insulating region is formed through the n epitaxial layer so that an anode bonding pad is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
    Type: Application
    Filed: July 26, 2002
    Publication date: March 27, 2003
    Applicant: Sanyo Electric Company, Ltd.
    Inventors: Tetsuro Asano, Katsuaki Onada, Yoshibumi Nakajima, Shigeyuki Murai, Hisaaki Tominaga, Koichi Hirata, Mikito Sakakibara, Hidetoshi Ishihara