Abstract: A hauling vehicle including a vehicle body, a distance meter that measures the distance to an obstacle, an in-vehicle controller that controls the vehicle body, and a communication device that communicates with a management controller that manages the vehicle body is provided.

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

Abstract: A semiconductor substrate includes a support substrate, a mask pattern located above the support substrate and including a mask portion, a seed portion locally located in a layer above the support substrate in a plan view, and a semiconductor part including a GaN-based semiconductor and located above the mask pattern to be in contact with the seed portion and the mask portion.

Abstract: A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A? represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

Abstract: An offline teaching device provided with an acquisition unit for acquiring first production data about a workpiece to be produced, and a teaching program creation unit for acquiring a first weld line of the workpiece from the first production data, and creating and outputting a first welding teaching program for executing welding by means of a welding robot, and a first inspection teaching program for executing an inspection of a weld bead, wherein, on the basis of a second weld line, a second welding teaching program for a workpiece to be produced using second production data and a second inspection teaching program are created and output.

Abstract: An offline teaching device include an input unit that receives an operator operation, an acquisition unit that acquires three-dimensional shape data of a workpiece, an operation trajectory of the welding, and a scanning range of a sensor; a generation unit that generates three-dimensional regions to be scanned by the sensor based on the acquired scanning range and a scanning section; and a control unit that disposes at least one of the three-dimensional regions on the three-dimensional shape data of the workpiece based on the operator operation input to the input unit, and that creates and outputs, to a welding robot that performs the welding, a teaching program for scanning the three-dimensional region based on the disposed three-dimensional region and the operation trajectory of the welding.

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Abstract: An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including: a determination unit configured to determine a normal variation range or a normal time variation behavior of a target state quantity which is a state quantity varying depending on a load of gas flowing into the vacuum pump, based on at least one of past target state quantities of the target vacuum pump or another vacuum pump; and a comparison unit configured to compare a current target state quantity of the target vacuum pump with the normal variation range or the normal time variation behavior and output the comparison result.

Abstract: A radiation-sensitive resin composition contains: a first polymer having a first structural unit including a partial structure obtained by substituting a hydrogen atom of a carboxy group or of a phenolic hydroxy group with an acid-labile group represented by formula (1); and a compound including: a monovalent radiation-sensitive onium cation moiety including an aromatic ring structure which includes a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion moiety. Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic ring structure having 5 to 30 ring atoms; R 1 and R2 each independently represent a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to an ethereal oxygen atom in the carboxy group or an oxygen atom in the phenolic hydroxy group.

Abstract: In one embodiment, a semiconductor storage device includes a string that has one end electrically connected to a bit line, and another end electrically connected to a source line, and includes a plurality of memory cells. An operation of writing data to each of a plurality of adjacent first memory cells among the plurality of memory cells is sequentially performed in a direction from a first memory cell on a side of the source line to a first memory cell on a side of the bit line. An operation of reading data from each of the plurality of adjacent first memory cells is performed to allow a current to flow through the string in a first direction from the source line to the bit line.

Abstract: A semiconductor storage device includes a first region including a level shifter, a second region including a level shifter, a power input pad, and an internal power generation circuit configured to generate an internal power supply voltage using a first power supply voltage supplied through the power input pad and supply the internal power supply voltage to the first and second regions. The internal power generation circuit separately transmits a first signal to the level shifter of the first region for triggering a start of a first operation of the first region and a second signal to the level shifter of the second region for triggering a start of a second operation of the second region.

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract: Provided is a shopping cart capable of simplifying equipment of a storage area of the shopping cart. A shopping cart allowed to be nested in a front-rear direction, including: a cart body; a battery configured to supply power to an electronic device attached to the cart body and displayed commodity information read by a reading device; a power receiving portion provided on a front side of the cart body and configured to be electrically connectable to an external power supply; and a power transmitting portion provided on a rear surface side of the power receiving portion and configured to supply power to a power receiving portion of another shopping cart nested in the shopping cart. Each of the power receiving portion and the power transmitting portion is provided with a magnet configured for holding a relative position.

Abstract: A semiconductor memory device includes a first memory cell transistor, a first bit line electrically coupled to the first memory cell transistor, a first sense amplifier, and a first latch circuit. The first sense amplifier includes a first node coupled to the first bit line, a first transistor including one end electrically coupled to the first latch circuit, a second node coupled to a gate of the first transistor, and a second transistor coupled between the first and second nodes. The second transistor is in an ON state during an operation of transferring a charge from the first bit line to the first and second nodes in accordance with data of the first memory cell transistor. The second transistor is in an OFF state during an operation of transferring data of the second node to the first latch circuit.

Abstract: A semiconductor device includes: a first output transistor and a second output transistor configured to be connected between a first terminal and second terminal; an active clamp circuit configured to be connected to a first control terminal of the first output transistor to limit a terminal-to-terminal voltage appearing between the first and second terminals to a clamp voltage or less; a first variable resistive element provided between a node configured to be fed with a control signal and the first control terminal; a second variable resistive element provided between the node and a second control terminal of the second output transistor; and a turn-off circuit configured to be connected to a connection node between the second variable resistive element and the second control terminal so as to be able to turn the second output transistor off.

Abstract: An all-solid-state battery includes a case, a battery element, and a restraint component. The case accommodates the battery element. The battery element includes an electrode part and a resin part. The resin part covers at least a part of a side face of the electrode part. The restraint component applies a first pressure to the electrode part. The restraint component applies a second pressure to the resin part. The ratio of the second pressure to the first pressure is from 1.5 to 18.

Abstract: An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including: a determination unit configured to determine a normal variation range or a normal time variation behavior of a target state quantity which is a state quantity varying depending on a load of gas flowing into the vacuum pump, based on at least one of past target state quantities of the target vacuum pump or another vacuum pump; and a comparison unit configured to compare a current target state quantity of the target vacuum pump with the normal variation range or the normal time variation behavior and output the comparison result.

Abstract: A semiconductor substrate includes a heterogeneous substrate, a mask layer having an opening portion and a mask portion, a seed portion overlapping the opening portion, and a semiconductor layer including a GaN-based semiconductor and disposed on the seed portion and the mask portion. An upper surface of an effective portion of the semiconductor layer includes at least one low-level defective region with a size of 10 ?m in a first direction along a width direction of the opening portion and 10 ?m in a second direction orthogonal to the first direction, and a line defect is not measured by a CL method in the low-level defective region.

Abstract: A biosample processing apparatus of an embodiment includes a sample supply part, a first collection part, a separation part, and a second collection part. The sample supply part is connected to one end of a tubular flow path and supplies a first sample containing components extracted from a subject to the flow path. The first collection part is provided on the flow path and collects target cells to be cultured from the first sample supplied to the flow path. The separation part is provided downstream of the first collection part on the flow path and separates a blood plasma component or a blood serum component as a second sample from the first sample from which the target cells have been collected by the first collection part. The second collection part is connected to another end of the flow path and collects the second sample separated by the separation part.