Abstract: A bead appearance inspection device includes an acquisition unit that acquires input data related to a welding bead, a storage unit that stores a first determination standard and a second determination standard used for an inspection of a defect of the welding bead, a first determination unit that executes a first inspection determination on the welding bead, and k second determination units, where k is an integer of 1 or more, that execute a second inspection determination on the welding bead. An appearance inspection result of the welding bead is created and output by using a determination result indicating whether a first inspection result acquired by the first inspection determination satisfies the first determination standard and a determination result indicating whether a second inspection result satisfies the second determination standard.

Abstract: Included are: an underlying substrate including a first surface; a semiconductor element layer dividable into a plurality of element portions, the semiconductor element layer being located on the first surface of the underlying substrate; and a support substrate including a second surface on which the semiconductor element layer is located, the second surface facing the first surface, the semiconductor element layer being located on the second surface. The support substrate and the semiconductor element layer include a weak portion used to divide the semiconductor element layer into the plurality of element portions.

Abstract: A bead appearance inspection device includes an input unit configured to enter input data related to a welding bead of a workpiece produced by welding, a first determination unit configured to perform a first inspection determination related to a shape of the welding bead based on a comparison between the input data and a master data, k second determination units, where k is an integer of 1 or more, that are equipped with k types of artificial intelligence and that are configured to perform a second inspection determination related to a welding defect of the welding bead based on processings of the k types of artificial intelligence targeting the input data, and a comprehensive determination unit configured to output a result of an appearance inspection of the welding bead to an output device based on determination results of the first determination unit and the k second determination units.

Abstract: The radiation-sensitive resin composition contains: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a structural unit represented by the following formula (1); and a radiation-sensitive acid generating agent. L represents a single bond, —COO—, —O—, or —CONH—. X represents a single bond, —O—, -G-O—, —CH2—, —S—, —SO2—, —NRA—, or —CONH—, wherein G represents a divalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, and RA represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. R2 and R3 each independently represent a halogen atom, a hydroxy group, a sulfanyl group, or an organic group having 1 to 20 carbon atoms.

Abstract: A chair includes a leg 1, a seat 5 including a pressure receiving surface PS, a backrest 6, and a support mechanism SM. The seat 5 can move in the front-rear or left-right direction along a predetermined trajectory and to downwardly incline a tip side of the seat 5 in a movement direction in accordance with a movement of the seat 5 from a predetermined reference position (S). The support mechanism SM includes a return-force generation unit configured to generate, in accordance with an amount of movement, a return force in a direction in which the seat 5 moved from the reference position (S) in the front-rear or left-right direction is returned to the reference position (S), and movably supports the backrest 6 in the left-right direction together with a movement of the seat 5 in the left-right direction.

Abstract: Provided is a semiconductor device, including at least: a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of an m-axis in the semiconductor layer being the first direction.

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Abstract: An all-solid-state battery, wherein on a first side surface of an all-solid-state battery laminate, a first electrode current collector layer includes a first electrode current collector protruding part, which protrudes in a surface direction, and a second electrode current collector layer includes a second electrode current collector protruding part, which protrudes in a surface direction, a surface direction area of a second electrode-solid electrolyte laminate is larger than a surface direction area of a first electrode laminate, the first electrode laminate is laminated on the inside of the second electrode-solid electrolyte laminate when viewed from the lamination direction, and on the first side surface, an edge of the second electrode-solid electrolyte laminate in the surface direction is at least partially covered with a resin layer so that the first electrode current collector protruding part does not directly contact the edge in the surface direction of the second electrode-solid electrolyte laminat

Abstract: According to an embodiment, a semiconductor memory device includes a memory cell, a first word line coupled between a control end of the memory cell and a first node, a resistance element coupled between the first node and a second node, a control circuit configured to output a voltage to the second node, a first switch coupled between the first node and a third node, a second switch coupled between the second node and the third node, and a comparator including an input end that receives a signal corresponding to a voltage of the third node.

Abstract: A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R1 represents a monovalent organic group having 1 to 30 carbon atoms; and X represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract: An inertial sensor includes a lower substrate and an upper substrate. The upper substrate includes a micro oscillator, electrodes and a pad, which are independent of each other. The micro oscillator includes a curved surface portion, a joint portion recessed inward from an apex of the curved surface portion and joined to a support portion of the lower substrate, a rim at an end of the curved surface portion and a conductive film covering the micro oscillator. The curved surface portion is in an aerial state. The rim is made of the same material as the electrodes, located on a virtual flat plane formed by the electrodes, and apart from and surrounded by the electrodes. A portion of the conductive film that covers the joint portion is electrically bonded to a lower metal film covering the support portion.

Abstract: An evaluation test method for flaking caused by hydrogen embrittlement includes: preparing a rolling bearing having a first bearing ring, a second bearing ring, and a rolling element, the first bearing ring being a rotation ring including a first raceway surface, the second bearing ring being a stationary ring including a second raceway surface facing the first raceway surface, the rolling element being disposed between the first raceway surface and the second raceway surface; and applying a rotation around a central axis onto the first bearing ring in a state in which a load is applied between the first raceway surface and the second raceway surface through the rolling element. Each of the first bearing ring, the second bearing ring, and the rolling element is composed of a steel. The first raceway surface and the second raceway surface are always entirely immersed in lubricating oil during the rotation.

Abstract: A method for manufacturing a semiconductor element of the present disclosure includes: a step of preparing a substrate; a first element forming step of forming a first semiconductor layer in a first region on a surface of the substrate; a first element separating step of separating the first semiconductor layer from the substrate; and a second element forming step of forming a second semiconductor layer in a second region on the surface of the substrate from which the first semiconductor layer is separated. Additionally, in the method for manufacturing a semiconductor element of the present disclosure, at least a portion of the second region overlaps the first region.

Abstract: A manufacturing apparatus of a power storage device includes a resin filling mold configured to form an internal space that houses a laminated electrode body and to supply photo-curing resin used for forming a resin layer on at least a side surface on a long side of the laminated electrode body. The mold includes an upper mold, a lower mold, and two side surface molds on the long sides. Further, the manufacturing apparatus includes a light radiation device that radiates light which photo-cures the photo-curing resin supplied to the internal space. The manufacturing apparatus is configured to, when a front part of the supplied photo-curing resin that flows along the side surface reaches a predetermined position of the side surface, cure the flowing front parts by radiating the light from the light radiation device and stop the flowing front part from flowing along the side surface.

Abstract: A semiconductor device having high on-state current and high reliability is provided. The semiconductor device includes, a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor over the second oxide; a third oxide over the second oxide; a second insulator over the third oxide; a third conductor located over the second insulator and overlapping with the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator over the third insulator; a fifth insulator over the fourth insulator; and a sixth insulator over the third conductor, the second insulator, the third oxide and the fifth insulator.

Abstract: For example, a semiconductor device includes an output electrode to be connected to an inductive load, a ground electrode to be connected to a ground terminal, first and second transistors connected in parallel between the output and ground electrodes, an active clamp circuit connected to the gate of the first transistor, and a gate control circuit to control the gates of the first and second transistors to keep the first and second transistors on in a first operation state and off in a second operation state. After a transition from the first operation state to the second, before the active clamp circuit operates, the gate control circuit short-circuits between the gate and source of the second transistor.

Abstract: A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

Abstract: A display device includes a housing, a display panel, a light source, a first acquirer, a second acquirer, and a stabilizer. The display panel is provided in the housing. The light source is provided in the housing, and includes an LED that irradiates the display panel with light. The first acquirer acquires a first temperature in a first region including a region where the light source is disposed in the housing. The second acquirer acquires a second temperature in a second region different from the first region. The stabilizer has a first adjustment mode for lighting the LED with maximum luminance as an adjustment mode for stabilizing luminance of the LED. The stabilizer operates the LED in the first adjustment mode in a case where a temperature difference between the first temperature and the second temperature is a first threshold value or more.

Abstract: A storage includes a first opening section, a second opening section, and a moving section. An article used in a board working machine configured to perform predetermined board work on a board is received or delivered through the first opening section. The second opening section is an opening section different from the first opening section, and when reception work or delivery work of the article is performed through the first opening section, an article different from the article can be received or delivered through the second opening section. The moving section moves the article to a predetermined storage section when the article is received through the first opening section or the second opening section and moves the article stored in the storage section to the first opening section or the second opening section when the article is delivered.