Patents by Inventor Katsuchika Suzuki

Katsuchika Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycarbosilazane, and composition comprising the same, and method for producing silicon-containing film using the same
    Patent number: 11866554
    Abstract: To provide a new silicon-containing polymer making it possible to form a cured film has features that its residual stress is small and crack resistance is high. A polycarbosilazane having particular cyclic structures.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: January 9, 2024
    Assignee: Merck Patent GmbH
    Inventors: Katsuchika Suzuki, Toshiya Okamura, Tetsuo Okayasu, Thorsten Vom Stein
  • POLYSILAZANE, SILICEOUS FILM-FORMING COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICEOUS FILM USING THE SAME
    Publication number: 20230374226
    Abstract: A polysilazane having a ratio of the amount of SiH3 exceeding 0.050 and a ratio of the amount of NH of less than 0.045, based on the amount of aromatic ring hydrogen of xylene when 1H-NMR of a 17% by mass solution of polysilazane dissolved in xylene is measured. A siliceous film-forming composition comprising the polysilazane. A method for producing a siliceous film comprising applying the polysilazane composition above a substrate.
    Type: Application
    Filed: September 29, 2021
    Publication date: November 23, 2023
    Inventors: Katsuchika SUZUKI, Toshiya OKAMURA, Tetsuo OKAYASU, Thorsten VOM STEIN
  • POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME
    Publication number: 20230303775
    Abstract: To provide a new silicon-containing polymer making it possible to form a cured film has features that its residual stress is small and crack resistance is high. A polycarbosilazane having particular cyclic structures.
    Type: Application
    Filed: October 5, 2021
    Publication date: September 28, 2023
    Inventors: Katsuchika SUZUKI, Toshiya OKAMURA, Tetsuo OKAYASU, Thorsten VOM STEIN
  • Method for forming isolation structure
    Patent number: 8969172
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara
  • METHOD FOR PRODUCING SILICON DIOXIDE FILM
    Publication number: 20130316515
    Abstract: [Problem] To provide a method capable of forming an insulating film suffering less from both shrinkage and stress. [Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such as various insulating films.
    Type: Application
    Filed: February 16, 2012
    Publication date: November 28, 2013
    Applicant: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.a.r.L.
    Inventors: Tatsuro Nagahara, Masanobu Hayashi, Katsuchika Suzuki
  • METHOD FOR FORMING ISOLATION STRUCTURE
    Publication number: 20130214383
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Application
    Filed: November 2, 2011
    Publication date: August 22, 2013
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara