Abstract: In a semiconductor device according to an aspect of the invention, a direction in which a fourth metal interconnection layer located on a semiconductor layer is extended is orthogonal to a direction in which third interconnection layers ML30 and ML37 located on the fourth interconnection layer are extended. Thus, even in a case where a stress is applied from outside to bonding pads BP1 and BP2 located above, the stress is wholly dispersed by the third interconnection layers and the fourth interconnection layer which are laminated to intersect with each other, and stress concentration on a particular point can be relieved to restrain deterioration in semiconductor device strength to a minimum. Accordingly, it is possible to provide the semiconductor device having a structure in which productivity of the semiconductor device can be improved while the stress concentration applied from outside on the particular point of the bonding pad is relieved.

Abstract: In a semiconductor device according to an aspect of the invention, a direction in which a fourth metal interconnection layer located on a semiconductor layer is extended is orthogonal to a direction in which third interconnection layers ML30 and ML37 located on the fourth interconnection layer are extended. Thus, even in a case where a stress is applied from outside to bonding pads BP1 and BP2 located above, the stress is wholly dispersed by the third interconnection layers and the fourth interconnection layer which are laminated to intersect with each other, and stress concentration on a particular point can be relieved to restrain deterioration in semiconductor device strength to a minimum. Accordingly, it is possible to provide the semiconductor device having a structure in which productivity of the semiconductor device can be improved while the stress concentration applied from outside on the particular point of the bonding pad is relieved.