Abstract: A validation/correction method is provided for design data or mask data by which a pattern which becomes critical in a process is extracted in advance so that the pattern can be corrected. Consequently, the process spec is achieved in a short period of time after OPC or process proximity effect correction (PPC).

Abstract: The subject invention provides a correction method for design data or mask data comprising the steps of: (i) carrying out PPC of design data or mask data; (ii) exposing and developing a resist with an evaluation mask including a critical pattern which becomes critical in a process, etching a circuit material using the resist having been developed, and measuring pattern sizes of the developed resist and the etched circuit material; (iii) extracting parameter numerical condition for preventing the design data or the mask data from being critical after OPC or PPC, as a rule or as a model based on the pattern sizes of the resist and the circuit material; (iv) extracting a critical pattern with a parameter not satisfying the foregoing rule or the model from the design data or the mask data; and (v) correcting the critical pattern.

Abstract: The present invention provides a device for extracting optimum parameters in a simulation at high precision and in a short period of time. The present invention also provides a photomask created using the lithography parameters obtained from the device, and a semiconductor device. The device includes a parameter setting section for setting a plurality of parameters necessary in a simulation; a first parameter extracting section for extracting parameters adapted to the simulation through a genetic algorithm or a simulated annealing method from the plurality of set parameters; and a second parameter extracting section for registering the extracted parameters through a high precision parameter extracting method, and fitting the parameters at high precision.

Abstract: A plurality of photomask pattern data are received at a time so as to carry out, with respect to an entire region of each photomask, correction for the optical proximity effect in a photoresist. Also, from the entire region of each photomask, an underlayer correction range which requires being corrected with respect to the optical proximity effect due to a base structure of the photoresist is automatically extracted so as to correct the photoresist within only the underlayer correction range. Further, from the entire region of each photomask, a development correction range which requires being corrected with respect to receding of edges and pattern deformation of the photoresist generated during development is automatically extracted so as to correct the photoresist within only the development correction range with respect to the development of the photoresist. As a result, it is possible to accurately and rapidly correct a photomask pattern for forming of a photoresist pattern.

Abstract: A plurality of photomask pattern data are received at a time so as to carry out, with respect to an entire region of each photomask, correction for the optical proximity effect in a photoresist. Also, from the entire region of each photomask, an underlayer correction range which requires being corrected with respect to the optical proximity effect due to a base structure of the photoresist is automatically extracted so as to correct the photoresist within only the underlayer correction range. Further, from the entire region of each photomask, a development correction range which requires being corrected with respect to receding of edges and pattern deformation of the photoresist generated during development is automatically extracted so as to correct the photoresist within only the development correction range with respect to the development of the photoresist. As a result, it is possible to accurately and rapidly correct a photomask pattern for forming of a photoresist pattern.

Abstract: A photomask for receiving light for exposure from a light source and projecting the emitted light onto a resist film on a wafer through an optical system so as to pattern the resist film includes a plurality of light transmitting portions for transmitting the light for exposure through a converging portion, and a convex portion made of a transparent or translucent material. The convex portion is formed protruding into the side on which the wafer is provided in order to cover the light transmitting portions so that the light for exposure is emitted as transmitted light which can form an image on the imaging plane of the wafer by utilizing refractive effects.