Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.20?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.2?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.20?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?) % and an area ratio of a ? phase (?) % in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.2?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?) % and an area ratio of a ? phase (?) % in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: In a clock data recovery circuit according to related art, it is difficult to achieve a high responsiveness. According to one embodiment, a clock data recovery circuit includes a loop filter, the loop filter including a first path (121, 122) that determines a loop gain that sets a speed of adjusting a phase of a recovery clock to a phase of an input signal, a second path (123, 124) that determines a frequency tracking gain that sets a speed of adjusting a frequency of the recovery clock to a frequency of the input signal, and a compensator 130 that gives a negative feedback from an output side to an input side of the first path and compensates for a phase delay of an output of a phase detector due to a delay amount of the loop filter.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.2?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12?f1=[Zn]+5×[Sn]?2×[Ni]?30, 10?[Zn]?0.3×[Sn]?2×[Ni]?28, 10?f3={f1×(32?f1)×[Ni]}1/2?33, 1.2?0.7×[Ni]+[Sn]?4, and 1.4?[Ni]/[Sn]?90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an ? phase is 99.5% or more by area ratio or an area ratio of a ? phase (?)% and an area ratio of a ? phase (?)% in an ? phase matrix satisfy a relationship of 0?2×(?)+(?)?0.7.

Abstract: A semiconductor device includes a first sampling circuit for outputting a data value and an edge value corresponding to odd-numbered data of data contained in an input signal, using multiphase sampling clocks including a plurality of sampling clocks having different phases by 90 degrees; and a second sampling circuit for outputting a data value and an edge value corresponding to even-numbered data of data contained in the input signal, using the multiphase sampling clocks. One piece of data is sampled in one sampling period, and two sampling periods are included in one cycle of the sampling clock, the first sampling circuit and the second sampling circuit each including a first data sampling circuit which adds a negative offset to a signal level of the input signal, samples the input signal, and outputs a first data value.

Abstract: In order to solve a problem that power consumption as to an edge sampling circuit is large in a semiconductor device in the related art, a semiconductor device according to one embodiment has a first sampling circuit for outputting an odd-numbered data value and an edge value and a second sampling circuit for outputting an even-numbered data value and an edge value, and a first offset and a second offset used for determining the edge value in one sampling circuit are determined based on a data value acquired from a location other than between a selector for selecting one of a plurality of data values sampled with a different offset in a path for sampling the data value and a shift register for transferring the data value selected by the selector in the other sampling circuit.

Abstract: In order to solve a problem that power consumption as to an edge sampling circuit is large in a semiconductor device in the related art, a semiconductor device according to one embodiment has a first sampling circuit for outputting an odd-numbered data value and an edge value and a second sampling circuit for outputting an even-numbered data value and an edge value, and a first offset and a second offset used for determining the edge value in one sampling circuit are determined based on a data value acquired from a location other than between a selector for selecting one of a plurality of data values sampled with a different offset in a path for sampling the data value and a shift register for transferring the data value selected by the selector in the other sampling circuit.

Abstract: A high load transmission V-belt includes: an endless tension band; and a plurality of blocks arranged side by side in a longitudinal direction of the tension band and each engaged with the tension band. Each of the plurality of blocks has a reinforcing structure member comprised of carbon fibers, and a resin coating layer provided so as to coat the reinforcing structure member.

Abstract: An axon regeneration promoter is disclosed that contains an inhibitor of RGM-like protein as an effective component. Inhibitors of RGM-like protein encompass inhibitors of RGM-like protein such as anti-RGM-like protein antibodies and Y27632, as well as antisense nucleic acids and double-stranded RNAs that can inhibit the transcription or translation of RGM-like protein. The axon regeneration promoter according to the present invention is effective for the regeneration of central nerve axons and thus contributes, for example, to the treatment of patients who have suffered damage to the central nervous system, for example, the spinal cord, due to, for example, a traffic accident or a cerebrovascular disorder.

Abstract: An axon regeneration promoter is disclosed that contains an inhibitor of RGM-like protein as an effective component. Inhibitors of RGM-like protein encompass inhibitors of RGM-like protein such as anti-RGM-like protein antibodies and Y27632, as well as antisense nucleic acids and double-stranded RNAs that can inhibit the transcription or translation of RGM-like protein. The axon regeneration promoter according to the present invention is effective for the regeneration of central nerve axons and thus contributes, for example, to the treatment of patients who have suffered damage to the central nervous system, for example, the spinal cord, due to, for example, a traffic accident or a cerebrovascular disorder.

Abstract: The present invention is directed to a stabilized dispersion magnetorheological fluid comprising a magnetic particle, a dispersive medium and a dispersing agent wherein said dispersing agent is a polyether containing a polymer unit represented by the following general formula (1): in the formula, R1 represents a hydrogen atom or a hydrocarbon group of 1 to 22 carbon atoms; R2 represents a hydrogen atom, a hydrocarbon group of 1 to 22 carbon atoms which may optionally have a substituent, or —(AO)m-R3; R3 represents a hydrocarbon group of 1 to 22 carbon atoms which may optionally have a substituent; A represents an alkylene group of 1 to 3 carbon atoms; m represents an integer of 1 to 50; and A groups which number m may be the same or different.

Abstract: The present invention has for its object to provide a magnetorheological fluid having good dispersion stability and freedom from an unwanted increase in viscosity.

Abstract: The present invention is directed to a stabilized dispersion magnetorheological fluid comprising a magnetic particle, a dispersive medium and a dispersing agent

Abstract: A process of bonding aromatic polyamide fibers to rubber compounds is disclosed, which comprises:the first step of treating fibers with an aqueous mixture comprising a resorcinol/formalin resin and a latex of a polymer containing halogens in amounts of not less than 45% by weight based on the polymer;the second step of treating the fibers with an aqueous adhesive composition comprising a resorcinol/formalin resin and a latex of an adhesive rubber which is compatible with the rubber in the rubber compound; andthe third step of placing the fibers in close contact with the rubber compound and vulcanizing the rubber together with the fibers. A second process is further disclosed wherein in the second step, the fibers are treated with an adhesive solution comprising at least one activating agent selected from the group consisting of polyisocyanates and polyepoxy compounds in organic solvents.

Abstract: A process of bonding aromatic polyamide fibers to rubber compounds is disclosed, which comprises:the first step of treating fibers with an aqueous mixture comprising a resorcinol/formalin resin and a latex of a polymer containing halogens in amounts of not less than 45% by weight based on the polymer;the second step of treating the fibers with an aqueous adhesive composition comprising a resorcinol/formalin resin and a latex of an adhesive rubber which is compatible with the rubber in the rubber compound; andthe third step of placing the fibers in close contact with the rubber compound and vulcanizing the rubber together with the fibers.A second process if further disclosed wherein in the second step, the fibers are treated with an adhesive solution comprising at least one activating agent selected from the group consisting of polyisocyanates and polyepoxy compounds in organic solvents.

Abstract: A process of bonding aromatic polyamide fibers to rubber compounds is disclosed, which comprises:the first step of treating fibers with an aqueous mixture comprising a resorcinol/formalin resin and a latex of a polymer containing halogens in amounts of not less than 45% by weight based on the polymer;the second step of treating the fibers with an aqueous adhesive composition comprising a resorcinol/formalin resin and a latex of an adhesive rubber which is compatible with the rubber in the rubber compound; andthe third step of placing the fibers in close contact with the rubber compound and vulcanizing the rubber together with the fibers.A second process is further disclosed wherein in the second step, the fibers are treated with an adhesive solution comprising at least one activating agent selected from the group consisting of polyisocyanates and polyepoxy compounds in organic solvents.

Abstract: A method of manufacturing a cathode ray tube wherein DC and AC voltages are superimposed and applied to a cathode ray tube between a high voltage electrode and a low voltage electrode with the high voltage electrode being at the high voltage side of the DC voltage so as to perform knocking treatment. The superimposed DC and AC voltages may be alternately applied in various manners so as to provide improved knocking of the tube.