Abstract: The present invention provides a crosslinkable elastomer composition, in which generation of HF under high temperature conditions is reduced, the decrease in weight to both NF3 plasma treatment and O3 treatment in the semiconductor manufacturing process is small and generation of foreign substances (particles) in these treatments is suppressed significantly. Specifically, the present invention relates to a crosslinkable elastomer composition comprising a crosslinkable elastomer and a filler having a specific surface area of at least 0.5 m2/g and containing a synthetic polymer having a thermally and chemically stable aromatic ring in the main chain, a crosslinkable elastomer composition comprising a crosslinkable elastomer and nonoxide ceramics and a crosslinkable elastomer composition wherein the decrease in weight by NF3 plasma irradiation is at most 0.20%.

Abstract: The present invention provides a sealing material having excellent plasma resistance, sealing property and non-sticking property, parts for plasma treating equipment having the sealing material, and a process for preparing the sealing material. The sealing material comprises a fluoroelastomer sealing material and a coating film formed by using an inorganic material on the surface of the fluoroelastomer sealing material, wherein a ratio of weight reduction of the sealing material after dipping it in perfluoro tri-n-butylamine at 60° C. for 70 hours and then taking it out and drying it at 90° C. for 5 hours, at 125° C. for 5 hours, and then at 200° C. for 10 hours, is not more than 0.4% by weight.

Abstract: The present invention provides a crosslinkable elastomer composition, in which generation of HF under high temperature conditions is reduced, the decrease in weight to both NF3 plasma treatment and O3 treatment in the semiconductor manufacturing process is small and generation of foreign substances (particles) in these treatments is suppressed significantly. Specifically, the present invention relates to a crosslinkable elastomer composition comprising a crosslinkable elastomer and a filler having a specific surface area of at least 0.5 m2/g and containing a synthetic polymer having a thermally and chemically stable aromatic ring in the main chain, a crosslinkable elastomer composition comprising a crosslinkable elastomer and nonoxide ceramics and a crosslinkable elastomer composition wherein the decrease in weight by NF3 plasma irradiation is at most 0.20%.

Abstract: The present invention provides a crosslinkable elastomer composition, in which generation of HF under high temperature conditions is reduced, the decrease in weight to both NF3 plasma treatment and O3 treatment in the semiconductor manufacturing process is small and generation of foreign substances (particles) in these treatments is suppressed significantly. Specifically, the present invention relates to a crosslinkable elastomer composition comprising a crosslinkable elastomer and a filler having a specific surface area of at least 0.5 m2/g and containing a synthetic polymer having a thermally and chemically stable aromatic ring in the main chain, a crosslinkable elastomer composition comprising a crosslinkable elastomer and nonoxide ceramics and a crosslinkable elastomer composition wherein the decrease in weight by NF3 plasma irradiation is at most 0.20%.

Abstract: The present invention relates to a surface coated sealing material and provides a sealing material that enhances chemical resistance, plasma resistance, and non-sticking while keeping strength, hardness, and sealing property of a rubber substrate. It is a sealing material that comprises a coating film comprising one kind or more of metal or metallic compound selected from the group of metals, metal oxides, metal nitrides, metal carbides and compounds thereof on the whole or a part of the surface of the substrate which comprises a soft material of Shore D hardness of at most 75 and Shore A hardness of 40 to 100.

Abstract: There is provided a fluorine-containing elastomer molded article which is obtained by irradiating the fluorine-containing elastomer molded article with a plasma and has a center line average roughness of not less than 0.65 ?m or a fluorine-containing elastomer molded article which is obtained by applying a resin coating layer on a fluorine-containing elastomer substrate, has a small peeling strength and a small etching rate at the irradiation of plasma and is excellent in detachability and whiteness. There is provided particularly a molded article suitable as various sealing materials for semiconductor production apparatuses.

Abstract: There is provided a crosslinkable elastomer composition, which has small decrease in weight to all of high concentration F radical irradiation, O2 plasma treatment and fluorine plasma treatment which are conducted in a semiconductor manufacturing process and significant plasma resistance, and a molded article comprising the crosslinkable elastomer composition.

Abstract: There is provided an elastomer composition which is prepared by using a very clean filler reduced in both of an amount of moisture generation and an amount of organic outgas generation and is suitable as a molding material for semiconductor production apparatuses and there is provided a molded article. The composition is a crosslinkable composition comprising a high molecular weight polymer, particularly a crosslinkable fluorine-containing elastomer and a filler which has a weight reduction ratio per unit surface area of not more than 2.5×10?5% by weight/m2 when heating at 200° C. for two hours and a total amount of organic gas generated of not more than 2.5 ppm when heating at 200° C. for 15 minutes. The molded article is produced from the crosslinkable composition.

Abstract: To provide a very clean elastomer molded article excellent in plasma resistance, having excellent property of metal-elution inhibition and is used suitably as a material for molded article for a semiconductor or liquid crystal manufacturing equipment. The molded article is obtained by crosslinking a crosslinkable elastomer composition comprising an elastomer component and a metal oxide filler comprising a silicon oxide filler containing impurity metals other than silicon in an amount of not more than 100 ppm. The molded article has an impurity metal content of not more than 100 ppm, and an increasing rate of particles generated by irradiating oxygen plasma to the article is not more than 1,000% or an amount of impurity metals other than silicon which is extracted with a 50% aqueous solution of HF is not more than 200 ppb.

Abstract: The present invention provides a crosslinkable elastomer composition, in which generation of HF under high temperature conditions is reduced, the decrease in weight to both NF3 plasma treatment and O3 treatment in the semiconductor manufacturing process is small and generation of foreign substances (particles) in these treatments is suppressed significantly. Specifically, the present invention relates to a crosslinkable elastomer composition comprising a crosslinkable elastomer and a filler having a specific surface area of at least 0.5 m2/g and containing a synthetic polymer having a thermally and chemically stable aromatic ring in the main chain, a crosslinkable elastomer composition comprising a crosslinkable elastomer and nonoxide ceramics and a crosslinkable elastomer composition wherein the decrease in weight by NF3 plasma irradiation is at most 0.20%.

Abstract: The present invention provides a fluorine-containing elastomer molded article, which is capable of withstanding use in high temperatures of 275° C. or higher and has resistance to high density plasma. Specifically, the present invention provides a fluorine-containing elastomer molded article obtained by crosslinking with a heat resistant crosslinking agent a crosslinkable fluorine-containing elastomer composition comprising an inorganic filler having a average primary particle size of at most 0.5 ?m, such as ?-type aluminum oxide and aluminum nitride, and a fluorine-containing elastomer component having a CN group or a COOH group, such as a perfluoro elastomer.

Abstract: To provide a crosslinkable elastomer composition which is excellent in mechanical properties, ensures a small amount of outgas such as DOP and is suitable as a very clean material for molded article for semiconductor production apparatuses. The composition comprises a crosslinkable elastomer component and ultra fine powders of silicon oxide, in which the ultra fine powders of silicon oxide have 100×1019 or less hydroxyl groups per gram on surfaces thereof, dioctylphthalate adsorption of not more than 8 ?g per 1 g of silicon oxide and an average particle size of not more than 0.5 ?m.

Abstract: Elastomer molded article for semiconductor production apparatuses which is obtained by crosslinking and molding a crosslinkable fluorine-containing elastomer composition comprising a crosslinkable fluorine-containing elastomer component and fine particles of aluminum oxide having an average particle size of not more than 0.5 &mgr;m. The elastomer molded article is excellent in plasma resistance and an amount of micro particles generated after irradiation of plasma is very small and therefore a very clean molded article for semiconductor production apparatuses, particularly a sealing material to be used in an environment of plasma irradiation is provided.

Abstract: To provide a packaging material being capable of maintaining a highly clean state, wherein the number of fine particles having a particle size of not less than 0.2 &mgr;m and being present on its surface facing an article to be packaged is not more than 5,000/cm2, a steam permeation degree at 40° C. at 90% RH is not more than 30 g/cm2·24 hr, a total amount of gas (excluding steam) to be generated when heating at 80° C. for 15 minutes is not more than 5 ppm and a total amount of water to be generated when heating at 80° C. for 30 minutes is not more than 13 ppm.

Abstract: To provide a novel and effective cleaning method which can give a cleaned fluorine-containing rubber molded article for semiconductor production apparatuses. The method of cleaning the fluorine-containing rubber molded article for semiconductor production apparatuses, which comprises washing the fluorine-containing rubber molded article at least once with ultra pure water which has a metal content of not more than 1.0 ppm and does not contain fine particles of not less than 0.2 &mgr;m in an amount of more than 300 per 1 ml.

Abstract: There is provided a fluorine-containing elastomer molded article which is obtained by irradiating the fluorine-containing elastomer molded article with a plasma and has a center line average roughness of not less than 0.65 &mgr;m or a fluorine-containing elastomer molded article which is obtained by applying a resin coating layer on a fluorine-containing elastomer substrate, has a small peeling strength and a small etching rate at the irradiation of plasma and is excellent in detachability and whiteness. There is provided particularly a molded article suitable as various sealing materials for semiconductor production apparatuses.

Abstract: There is provided an elastomer composition which is prepared by using a very clean filler reduced in both of an amount of moisture generation and an amount of organic outgas generation and is suitable as a molding material for semiconductor production apparatuses and there is provided a molded article. The composition is a crosslinkable composition comprising a high molecular weight polymer, particularly a crosslinkable fluorine-containing elastomer and a filler which has a weight reduction ratio per unit surface area of not more than 2.5×10−5% by weight/m2 when heating at 200° C. for two hours and a total amount of organic gas generated of not more than 2.5 ppm when heating at 200° C. for 15 minutes. The molded article is produced from the crosslinkable composition.

Abstract: Elastomer molded article for semiconductor production apparatuses which is obtained by crosslinking and molding a crosslinkable fluorine-containing elastomer composition comprising a crosslinkable fluorine-containing elastomer component and fine particles of aluminum oxide having an average particle size of not more than 0.5 &mgr;m. The elastomer molded article is excellent in plasma resistance and an amount of micro particles generated after irradiation of plasma is very small and therefore a very clean molded article for semiconductor production apparatuses, particularly a sealing material to be used in an environment of plasma irradiation is provided.

Abstract: To provide an elastomer molded article for a semiconductor manufacturing equipment which not only has cleanliness required but also has an excellent plasma resistance and an excellent property of metal-elution inhibition. The elastomer molded article is obtained by crosslinking a crosslinkable elastomer composition comprising a crosslinkable elastomer component and a carbon black filler having an average particle size of not more than 700 &mgr;m and an impurity metal content measured by an ashing analysis method of not more than 300 ppm and has an impurity metal content measured by an ashing analysis method of not more than 100 ppm. An increasing rate of particles generated by irradiating oxygen plasma to the article is not more than 500% or an amount of impurity metals extracted from the article with a 50% aqueous solution of HF is not more than 500 ppb.

Abstract: A digital automatic power controller including a photo-diode for receiving input of a light signal output from a laser diode and converting the signal into a photoelectric conversion signal, a sample hold circuit for outputting a sample hold signal based on the photoelectric conversion signal, a comparator for comparing the signal level of the sample hold signal and a reference voltage to output a count control signal according to the comparison result, a counter circuit responsive to the count control signal for counting down or up a bit of a predetermined order to output an obtained count value, a digital-to-analog conversion circuit for converting the count value into an analog signal, and a light source drive control circuit for controlling the intensity of the output light of the laser diode by a driving current generated according to the level of the analog signal.