Abstract: A current amplifying element that operates at a higher speed than conventional semiconductor devices is provided. An input current flows through an input current path 60 in a direction X, and a magnetic field generated from a magnet 90 is applied in a direction Z which is perpendicular to the direction X. An output current path 70 is formed under the input current path 60 with an insulator 80 interposed therebetween. Since the direction in which an output current flows is perpendicular to both the input current and the magnetic field, the current is amplified by the galvanomagnetic effects produced by the input current and the magnetic field.

Abstract: A current amplifying element that operates at a higher speed than conventional semiconductor devices is provided. An input current flows through an input current path 60 in a direction X, and a magnetic field generated from a magnet 90 is applied in a direction Z which is perpendicular to the direction X. An output current path 70 is formed under the input current path 60 with an insulator 80 interposed therebetween. Since the direction in which an output current flows is perpendicular to both the input current and the magnetic field, the current is amplified by the galvanomagnetic effects produced by the input current and the magnetic field.

Abstract: It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.

Abstract: It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output.

Abstract: It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.

Abstract: It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output.

Abstract: An acyl peptide hydrolase having an optimum temperature range of 90-95.degree. C. and a gene encoding the same are disclosed. With the above enzyme, it becomes possible to conduct amino terminal analysis of acylated proteins and peptides at high temperatures.

Abstract: Disclosed are a thermophilic phospholipase having an optimum temperature range of 95 to 105.degree. C. which is useful in high-temperature degumming processes in oil refining process and high-temperature processing of phospholipids; and a method for producing a thermophilic phospholipase comprising culturing a microorganism capable of producing the phospholipase in a culture medium and collecting the phospholipase from the resultant culture.

Abstract: A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.