Abstract: Provided is a thin thermoelectric conversion module provided with no support base material and including: an integrated body including an insulator configured to fill a gap defined by a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material, the chips being alternately arranged and spaced apart from each other; a common first electrode provided on one surface of the integrated body and joining one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material; and a common second electrode provided on another surface of the integrated body, facing the first electrode, and joining another surface of the chip of the N-type thermoelectric conversion material and another surface of the chip of the P-type thermoelectric conversion material, in which the first electrode and the second electrode provide electrically serial connection between the chip of the P-type thermoelectric

Abstract: The pressure sensitive adhesive tape for semiconductor processing includes a base which has a Young's modulus of 1000 MPa or more at 23° C., a buffer layer which is provided on at least one surface of this base, and a pressure sensitive adhesive layer provided on the other surface of the base. The buffer layer has a tensile storage elastic modulus (E23) of 100-2000 MPa at 23° C., and a tensile storage elastic modulus (E60) of 20-1000 MPa at 60° C.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: [Object] To provide a semiconductor protective film capable of suppressing a warpage of a semiconductor chip without impairing productivity and reliability, a semiconductor device including this, and a composite sheet. [Solving Means] A semiconductor protective film 10 according to an embodiment of the present invention includes a protective layer 11 formed of a non-conductive inorganic material and an adhesive layer 12 provided on one surface of the protective layer 11. The protective layer 11 includes at least a vitreous material and is typically formed of plate glass. Accordingly, a warpage of a semiconductor element as a protection target can be suppressed effectively.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The pressure sensitive adhesive tape for semiconductor processing includes a base which has a Young's modulus of 1000 MPa or more at 23° C., a buffer layer which is provided on at least one surface of this base, and a pressure sensitive adhesive layer provided on the other surface of the base. The buffer layer has a tensile storage elastic modulus (E23) of 100-2000 MPa at 23° C., and a tensile storage elastic modulus (E60) of 20-1000 MPa at 60° C.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: A sheet having an adhesive resin layer attached thereto includes a base and an adhesive resin layer laminated on the base. The rate of shrinkage of the base in each of an MD direction and a CD direction after the heating of the sheet at 70° C. for 1 minute is ?0.5 to 0.5% and the bending resistance of the base is 80 mm or more.

Abstract: [Object] To provide a semiconductor protective film capable of suppressing a warpage of a semiconductor chip without impairing productivity and reliability, a semiconductor device including this, and a composite sheet. [Solving Means]A semiconductor protective film 10 according to an embodiment of the present invention includes a protective layer 11 formed of a non-conductive inorganic material and an adhesive layer 12 provided on one surface of the protective layer 11. The protective layer 11 includes at least a vitreous material and is typically formed of plate glass. Accordingly, a warpage of a semiconductor element as a protection target can be suppressed effectively.

Abstract: A sheet having an adhesive resin layer attached thereto includes a base and an adhesive resin layer laminated on the base. The rate of shrinkage of the base in each of an MD direction and a CD direction after the heating of the sheet at 70° C. for 1 minute is ?0.5 to 0.5% and the bending resistance of the base is 80 mm or more.

Abstract: A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Abstract: Disclosed herein is a pressure sensitive adhesive double coated sheet comprising a shrink substrate and, superimposed on one side thereof, an energy radiation curable pressure sensitive adhesive layer and, superimposed on the other side thereof, a removable pressure sensitive adhesive layer composed of an adhesive having a modulus of elasticity at 120° C. of 5×105 Pa or less. The pressure sensitive adhesive double coated sheet according to the invention enables efficiently processing a work piece with high precision. In particular the pressure sensitive adhesive double coated sheet is suitable to a process capable of producing IC chips of high thickness precision with high yield by reducing warp and minimizing carrying breakage in the grinding of extremely thin or large diameter silicon wafers and capable of performing back grinding and dicing in the same configuration.

Abstract: Provided is a pressure sensitive adhesive sheet that does not adhere to other apparatuses, even when it is used in a manufacturing scheme using heat treatment or treatment involving heat generation. More particularly, the pressure sensitive adhesive sheet is suited for semiconductor wafer processing, possessing unprecedented high-temperature heat resistance. The pressure sensitive adhesive sheet can be used as a surface protective sheet, a dicing sheet or a pickup sheet, by imparting properties such as a protective function of an uneven circuit surface or expanding properties. The pressure sensitive adhesive sheet comprises a base material obtained by film-forming and curing a first curable resin, a top coat layer formed on the base material by coating and curing a second curable resin, and a pressure sensitive adhesive layer formed on the opposite side of the base material.

Abstract: A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Abstract: Disclosed herein is a pressure sensitive adhesive double coated sheet comprising a shrink substrate and, superimposed on one side thereof, an energy radiation curable pressure sensitive adhesive layer and, superimposed on the other side thereof, a removable pressure sensitive adhesive layer composed of an adhesive having a modulus of elasticity at 120° C. of 5×105 Pa or less.