Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (250) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. The metal plug has a side surface (250S) surrounding each of the micro-LEDs and spaced away from the first semiconductor layer and the second semiconductor layer of each of the micro-LEDs.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) having an upper surface covered with a mask layer (150), the mask layer having a plurality of openings (150G), and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes one or a plurality of semiconductor rods having a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) having an upper surface covered with a mask layer (150), the mask layer having a plurality of openings (150G), and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer.

Abstract: A correction image generating system comprises: a main body of an electronic apparatus, which main body comprises a display portion, a storage portion, a correction data generating portion, and an image data correcting portion; and an imaging portion. The predetermined image data is modified reference image data in which a reference image data is corrected by initial correction data generated in a manufacturing phase of the electronic apparatus; the display portion displays the reference image based on the modified reference image data; and the correction data generating portion generates the correction data based on a comparison result between the imaged image data or data based on the imaged image data, and the modified reference image data or data based on the modified reference image data.

Abstract: According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (212). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (212). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300), a backplane (400) provided on the middle layer, a bank layer (640) supported by the crystal growth substrate, the bank layer defining a plurality of pixel openings (645) where the ultraviolet or bluish violet light radiated from the plurality of micro-LEDs respectively enters, and a red quantum dot phosphor (65R), a green quantum dot phosphor (65G) and a blue quantum dot phosphor (65B) respectively provided in the plurality of pixel openings of the bank layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, and a backplane (400) provided on the middle layer. The device isolation region includes an embedded insulator (25) filling a gap between the micro-LEDs, and the embedded insulator has at least one through hole (26) for the metal plug.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300), a backplane (400) provided on the middle layer, and a titanium nitride layer (50) located between the substrate and the second semiconductor layer. The device isolation region includes an embedded insulator (25) filling a gap between the plurality of micro-LEDs, and the embedded insulator has at least one through hole (26) for the metal plug. The metal plug includes a titanium layer (24A) which extends beyond the embedded insulator so as to be in contact with the titanium nitride layer.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer.

Abstract: In the present embodiment, a sealing agent (50) sealing two substates contains a low melting-point glass material and is adhered to each of a first substrate (10) and a second substrate (20), a barrier rib (60), which is formed in such a manner as to surround the outer periphery of an electronic element (30), is disposed between the sealing agent (50) and the electronic element (30), and between the first substrate (10) and the second substrate (20), and the sealing agent (50) is spaced apart from the barrier rib (60). As a result, a deterioration of the electronic element, caused by the heat produced when sealing, may be prevented while the electronic element formed between the two substrates is protected from moisture and oxygen.

Abstract: According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: The present invention is equipped with a substrate upon which a drive circuit containing a TFT, a planarization film, and an OLED are formed. The TFT is provided with a gate electrode, a drain electrode, a source electrode, and a semiconductor layer with regions serving as the channel and extends along a prescribed direction. The drain electrode and the source electrode are disposed such that respective portions of the drain electrode and the source electrode are arranged in an alternating manner along the prescribed direction. The connection between the drive circuit and the OLED is achieved via a conductor layer with a Ti layer and a Cu layer (Cu alloy layer) and is embedded in the interior of a contact hole formed in the planarization film, and the surface of the planarization film is formed with an arithmetic mean roughness Ra of no more than 50 nm.

Abstract: According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (212). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (212). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i).

Abstract: The present invention is equipped with: a substrate (10) that has a surface upon which a drive circuit containing a TFT (20) is formed; a planarizing layer (30) that makes the surface of the substrate (10) planar by covering the drive circuit; and an organic light emitting element (40) that is provided with a first electrode (41) formed upon the surface of the planarization film and connected to the drive circuit, an organic light emitting layer (43) formed upon the first electrode, and a second electrode (44) formed upon the organic light emitting layer. In addition, the planarizing layer (30) includes a first inorganic insulating layer (31) and an organic insulating layer (32) that are layered upon the drive circuit, and the surface of the organic insulating layer (32) is formed with an arithmetic mean roughness Ra of no more than 50 nm.

Abstract: According to a method for producing a flexible OLED device of the present disclosure, a multilayer stack (100) is provided, the multilayer stack including a base (10), a functional layer region (20) which includes a TFT layer and an OLED layer, a flexible film (30) provided between the base and the functional layer region and supporting the functional layer region, and a release layer (12) provided between the flexible film and the base and bound to the base. The release layer is irradiated with lift-off light (216) transmitted through the base, whereby the flexible film is delaminated from the release layer. The release layer is made of an alloy of aluminum and silicon.

Abstract: A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240) located between the micro-LEDs. The device isolation region includes at least one metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300) which includes first contact electrodes (31) electrically coupled with the first semiconductor layer and a second contact electrode (32) coupled with the metal plug, a backplane (400) provided on the middle layer, and a titanium nitride layer (50) located between the substrate and the second semiconductor layer.