Patents by Inventor Katsuhiko Maeda

Katsuhiko Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6249304
    Abstract: The present invention is aimed at carrying out high-precision and stable image formation using a gray-level image forming technique. In carrying out image formation by a gray-level electrophotographic process, the relationship between the layer thickness Tp of the photosensitive layer on the photosensitive member and the exposure diameter Db of a light beam emitted onto the photosensitive member is defined as 2Tp <Db, so that the charge diffusion and electric field in the photosensitive layer on the photosensitive member can be small. The maximum exposure within the exposure diameter Db is set at a value that can sufficiently reduce the differential sensitivity of the photosensitive layer, where the exposure diameter Db of the light beam is the minimum diameter at 1/e2 with respect to the peak value of the exposure distribution obtained by integrating the energy distribution of the light beam with the exposure time.
    Type: Grant
    Filed: May 13, 1999
    Date of Patent: June 19, 2001
    Assignee: Ricoh Company, Ltd.
    Inventors: Noboru Sawayama, Akio Kosuge, Atsushi Takehara, Hiroshi Yoshimura, Katsuhiko Maeda
  • Patent number: 6137518
    Abstract: In an image forming apparatus for electrophotographically forming an image with an LED (Light Emitting Diode) array having a number of LEDs arranged in an array for controllably emitting light in accordance with image data, dots to be respectively formed by the LEDs have a target dot diameter X satisfying a relation of P<X<2P where P is a pitch P between the LEDs. Despite that the dot diameters of LEDs may slightly differ from each other, an image free from noticeable white stripes or black stripes is achievable although some difference in density may occur, depending on the overlapping degree of or the distance between dots.
    Type: Grant
    Filed: October 9, 1998
    Date of Patent: October 24, 2000
    Assignee: Ricoh Company, Ltd.
    Inventor: Katsuhiko Maeda
  • Patent number: 5635002
    Abstract: Disclosed is a structure composed of a ragged base body with a ragged surface and a non-adhesive layer of a non-adhesive high polymer, in which the layer is fixed to at least the depressions of the ragged surface in such a way that the ragged profile of the body appears on the outer surface, reiterated by the layer. The ragged profile has a mean surface roughness Ra of 0.5 to 20 .mu.m and the mean distance Z between the adjacent projections forming the ragged profile is 20 to 1000 .mu.m. The non-adhesive high polymer may be a silicone high polymer having a silicone oil content of 10% or less. It has an effective surface tension of 32 dyn/cm or less. As the structure has improved releasing characteristics, adhesion of an adhesive substance to the structure may be effectively prevented without using any conventional releasing agent.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: June 3, 1997
    Assignee: Tokyo Silicone Co., Ltd.
    Inventors: Isamu Oikawa, Katsuhiko Maeda
  • Patent number: 5466510
    Abstract: Disclosed is a structure composed of a ragged base body with a ragged surface and a non-adhesive layer of a non-adhesive high polymer, in which the layer is fixed to at least the depressions of the ragged surface in such a way that the ragged profile of the body appears on the outer surface, reiterated by the layer. The ragged profile has a mean surface roughness Ra of 0.5 to 20 .mu.m and the mean distance Z between the adjacent projections forming the ragged profile is 20 to 1000 .mu.m. The non-adhesive high polymer may be a silicone high polymer having a silicone oil content of 10% or less. It has an effective surface tension of 32 dyn/cm or less. As the structure has improved releasing characteristics, adhesion of an adhesive substance to the structure may be effectively prevented without using any conventional releasing agent.
    Type: Grant
    Filed: June 8, 1994
    Date of Patent: November 14, 1995
    Assignee: Tokyo Silicone Co., Ltd.
    Inventors: Isamu Oikawa, Katsuhiko Maeda
  • Patent number: 4467035
    Abstract: Cultivation of phototrophic bacteria such as in the treatment of organic wastes is carried out in a light field substantially free from ultraviolet light having a wavelength of not more than 340 nm. This process promotes growth of the phototrophic bacteria and improves quality of the resulting bacterial cell.
    Type: Grant
    Filed: July 16, 1982
    Date of Patent: August 21, 1984
    Assignee: Nippon Carbide Kogyo Kabushiki Kaisha
    Inventors: Isamu Harasawa, Yukio Hariki, Katsuhiko Maeda, Koichi Nakamura
  • Patent number: 4235043
    Abstract: A method for cultivating an alga, which comprises growing the alga in a light field substantially free from light of wavelengths of not more than 340 nm; and a covering material for use in the cultivation of algae, said covering material substantially inhibiting the transmission of light of wavelengths of not more than 340 nm.
    Type: Grant
    Filed: March 14, 1979
    Date of Patent: November 25, 1980
    Assignee: Nippon Carbide Kogyo Kabashiki Kaisha
    Inventors: Isamu Harasawa, Yukio Hariki, Katsuhiko Maeda, Kouichi Nakamura