Abstract: According to one embodiment, a vapor phase growth apparatus includes a susceptor in a chamber, the susceptor configured to rotate on an axis perpendicular to a surface of the susceptor, a plurality of substrate holding portions above the susceptor, each of the substrate holding portions configured to revolve around the axis by the rotation of the susceptor and configured to rotate circumferentially, a plurality of bearings arranged in a housing between the susceptor and the substrate holding portion, and a plurality of blade portions on an outer periphery of the substrate holding portion, each of the blade portions extending radially toward a center of the substrate holding portion.

Abstract: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first regions and the second regions are alternately arranged. A proportion of the sum of the first widths to a distance between the first surface and the second surface is 0.5 or more. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer.

Abstract: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first regions and the second regions are alternately arranged. A proportion of the sum of the first widths to a distance between the first surface and the second surface is 0.5 or more. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer.

Abstract: A method of manufacturing a semiconductor light emitting device employs an MOCVD process. The method sequentially forms, on a GaAs substrate, at least an InGaAlP clad layer, an active layer, an InGaAlP clad layer, a GaAlAs or InGaAlP current diffusion layer, and a GaAlAs or InGaAlP light scattering layer. The flow-rate ratio (V/III ratio) of a V-group source gas to a III-group source gas for forming the light scattering layer is smaller than that for forming the current diffusion layer. As a result, the surface of the light scattering layer is roughened to improve light emission efficiency.

Abstract: A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.