Abstract: A temperature control apparatus for controlling the temperature of at least a temperature controlled portion of a microchip is provided. The temperature control apparatus includes a heat sink, a temperature control unit, and a surrounding unit. The temperature control unit is disposed adjacent to the heat sink. The temperature control unit includes at least one Peltier-type temperature control device that is configured to control the temperature of at least a temperature controlled portion of a microchip. The surrounding unit is disposed on the heat sink. The surrounding unit is configured to surround the at least one Peltier-type temperature control device. The surrounding unit is configured to define a closed-space together with the heat sink and the microchip. The closed-space contains the at least one Peltier-type temperature control device.

Abstract: A temperature control apparatus for a microchemical chip having at least one chemical reactor includes a temperature regulator, and a controller. The temperature regulator can advantageously be configured to allow the microchemical chip to be mounted thereon. The temperature regulator can advantageously be configured to be thermally engaged with the at least one chemical reactor so as to control the temperature of the at least one chemical reactor. The controller can advantageously be removably connected to the temperature regulator. The controller can advantageously be configured to control the temperature regulator.

Abstract: A temperature control apparatus for controlling the temperature of at least a temperature controlled portion of a microchip is provided. The temperature control apparatus includes a heat sink, a temperature control unit, and a surrounding unit. The temperature control unit is disposed adjacent to the heat sink. The temperature control unit includes at least one Peltier-type temperature control device that is configured to control the temperature of at least a temperature controlled portion of a microchip. The surrounding unit is disposed on the heat sink. The surrounding unit is configured to surround the at least one Peltier-type temperature control device. The surrounding unit is configured to define a closed-space together with the heat sink and the microchip. The closed-space contains the at least one Peltier-type temperature control device.

Abstract: A temperature control apparatus for a microchemical chip having at least one chemical reactor includes a temperature regulator, and a controller. The temperature regulator can advantageously be configured to allow the microchemical chip to be mounted thereon. The temperature regulator can advantageously be configured to be thermally engaged with the at least one chemical reactor so as to control the temperature of the at least one chemical reactor. The controller can advantageously be removably connected to the temperature regulator. The controller can advantageously be configured to control the temperature regulator.

Abstract: A thermoelectric module is constituted by a pair of substrates having electrodes, which are arranged opposite to each other with a prescribed space therebetween, in which a prescribed number of thermoelectric elements are arranged in such a way that a p-type and an n-type are alternately arranged, so that the thermoelectric elements are connected in series or in parallel together with the electrodes. Herein, one substrate is a heat absorption side, and other substrate is a heat radiation side. In addition, a current density in a current transmission area of the heat-absorption-side electrode is set to 50 A/mm2 or less, and a height of the thermoelectric element is set to 0.7 mm or less. Furthermore, a temperature-controlled semiconductor module can be realized by combining a thermoelectric module with a semiconductor component such as a semiconductor laser.

Abstract: A thermoelectric module package stores a thermoelectric module for controlling temperature of a semiconductor element (e.g., a semiconductor laser) having high output power, wherein it is constituted by a frame member and a base member, on which various electrode patterns are formed. That is, the base member has internal electrodes for establishing electrical connections with the semiconductor element and thermoelectric module, and external electrodes for establishing electrical connections with external circuitry. Due to such an integrated arrangement of electrode patterns on the base member, it is possible to reduce the number of parts required for manufacturing the thermoelectric module package, which can be therefore manufactured with ease and at a relatively low cost. Incidentally, the thermoelectric module package can be produced by integrally combining a frame and a base together.

Abstract: A thermoelectric module package stores a thermoelectric module for controlling temperature of a semiconductor element (e.g., a semiconductor laser) having high output power, wherein it is constituted by a frame member and a base member, on which various electrode patterns are formed. That is, the base member has internal electrodes for establishing electrical connections with the semiconductor element and thermoelectric module, and external electrodes for establishing electrical connections with external circuitry. Due to such an integrated arrangement of electrode patterns on the base member, it is possible to reduce the number of parts required for manufacturing the thermoelectric module package, which can be therefore manufactured with ease and at a relatively low cost. Incidentally, the thermoelectric module package can be produced by integrally combining a frame and a base together.

Abstract: A thermoelectric module is constituted by a pair of substrates having electrodes, which are arranged opposite to each other with a prescribed space therebetween, in which a prescribed number of thermoelectric elements are arranged in such a way that a p-type and an n-type are alternately arranged, so that the thermoelectric elements are connected in series or in parallel together with the electrodes. Herein, one substrate is a heat absorption side, and other substrate is a heat radiation side. In addition, a current density in a current transmission area of the heat-absorption-side electrode is set to 50 A/mm2 or less, and a height of the thermoelectric element is set to 0.7 mm or less. Furthermore, a temperature-controlled semiconductor module can be realized by combining a thermoelectric module with a semiconductor component such as a semiconductor laser.

Abstract: A thermoelectric module is basically constituted in a double-stage structure for arranging thermoelectric elements between insulating substrates, one of which has at least a pair of recesses and prescribed patterns of conduction layers. Herein, terminal conduction layers are formed inside of recesses, which reliably ensure electrical conduction between conduction layers formed on surfaces of the insulating substrate. In manufacture, cutting areas are defined on an insulating material plate, in which through holes are formed at prescribed positions on boundaries between cutting areas or at corners of cutting areas, wherein conduction layers are formed in prescribed patterns, and terminal conduction layers are formed inside of through holes and are interconnected with conduction layers selectively formed in proximity to through holes.

Abstract: A thermoelectric module includes n-type semiconductor columns and p-type semiconductor columns connected in series through metal electrodes formed on inner surfaces of a pair of electrically insulating substrates, and the semiconductor columns are arranged so dense that the total cross sections of the semiconductor columns occupy at least 42 percent of one of the inner surfaces, whereby the converting efficiency is improved by virtue of restriction of the convective heat transfer between the electrically insulating substrates.