Abstract: This invention provides a method of manufacturing a semiconductor device, including the steps of forming an insulating film and a first metal film on one major surface of a semiconductor substrate, each of the insulating film and the first metal film having a partially exposed surface, and selectively forming a second metal film on the exposed surface of the first metal film, wherein formation of the second metal film is performed in an atmosphere containing a gasified silicon compound obtained upon gasifying a liquid silicon compound containing at least one element selected from the group consisting of carbon, hydrogen, oxygen, chlorine, and fluorine, or its reaction product, whereby the exposed surface of the insulating film is chemically modified with the silicon compound or its reaction product.