Abstract: A handling apparatus (14a) handles a server attack taking place on a network (1Na) or handles a server attack as requested by a security system provided on another network. In accordance with a determination that it is not possible to handle the server attack by the handling apparatus (14a), the control determination apparatus (12a) makes a request to another security system (1Sb) capable of handling the server attack to handle the server attack. A centralized control apparatus (11) determines whether the server attack taking place on the network (1Na) can be handled on another network.

Abstract: A handling apparatus (14a) handles a server attack taking place on a network (1Na) or handles a server attack as requested by a security system provided on another network. In accordance with a determination that it is not possible to handle the server attack by the handling apparatus (14a), the control determination apparatus (12a) makes a request to another security system (1Sb) capable of handling the server attack to handle the server attack. A centralized control apparatus (11) determines whether the server attack taking place on the network (1Na) can be handled on another network.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: A reset signal generation circuit for generating a reset signal synchronously or asynchronously to a clock signal in accordance with an operation state. An operation detection circuit detects operation of a CPU and generates an operation detection signal. A signal control circuit generates a first reset signal synchronously or asynchronously to an internal clock signal based on the operation detection signal and a system reset signal. The first reset signal is provided to synchronous circuits including the CPU.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: A reset signal generation circuit for generating a reset signal synchronously or asynchronously to a clock signal in accordance with an operation state. An operation detection circuit detects operation of a CPU and generates an operation detection signal. A signal control circuit generates a first reset signal synchronously or asynchronously to an internal clock signal based on the operation detection signal and a system reset signal. The first reset signal is provided to synchronous circuits including the CPU.

Abstract: A reset signal generation circuit for generating a reset signal synchronously or asynchronously to a clock signal in accordance with an operation state. An operation detection circuit detects operation of a CPU and generates an operation detection signal. A signal control circuit generates a first reset signal synchronously or asynchronously to an internal clock signal based on the operation detection signal and a system reset signal. The first reset signal is provided to synchronous circuits including the CPU.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: A reset signal generation circuit for generating a reset signal synchronously or asynchronously to a clock signal in accordance with an operation state. An operation detection circuit detects operation of a CPU and generates an operation detection signal. A signal control circuit generates a first reset signal synchronously or asynchronously to an internal clock signal based on the operation detection signal and a system reset signal. The first reset signal is provided to synchronous circuits including the CPU.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Abstract: An electron beam melting method for a metallic material which is melted by an electron beam in a melting furnace is disclosed. The method comprises: locating an actual melting material and a pre-melting material in the melting furnace; forming a melted surface on the pre-melting material by an electron beam under a reduced pressure; and melting the actual melting material by the electron beam while maintaining the reduced pressure in the melting furnace.

Abstract: An electron beam melting method for a metallic material which is melted by an electron beam in a melting furnace is disclosed. The method comprises: locating an actual melting material and a pre-melting material in the melting furnace; forming a melted surface on the pre-melting material by an electron beam under a reduced pressure; and melting the actual melting material by the electron beam while maintaining the reduced pressure in the melting furnace.

Abstract: A contact layer having a low resistance in an LED is extended from an inside edge of a light take-out region in a light emitting dot to a central position thereof, whereby an input current in the light take-out region expands, while an electrode is extended from an inside edge of the light take-out region to the center of the light take-out region so as to shape like substantially a letter T with a length which is not over the center, whereby increase in an electrode covering ratio in the light take-out region can be suppressed. As a result, a uniform light output in the light take-out region can be attained, so that a light output can be remarkably improved.

Abstract: Mechanical vibration detecting sensors and a sound wave sensor are provided in a column, and mechanical vibration detecting sensors, a sound wave sensor and electromagnetic wave detecting antennas are provided in a sample stage side. Outputs of the sensors and the antennas are processed by signal processing circuits and correction signals generated by these signal processing circuits are added to X-direction and Y-direction scanning signals from signal generating circuits.

Abstract: This invention relates to a method for preparing acrylonitrile by ammoxydation using a multi-story quenching tower. The method comprises the steps of supplying the reacted gas into the first quenching chamber of the multi-story quenching tower, said first quenching chamber has a water supply pipe equipped with spray nozzles at a two-dimensional density of more than 2 nozzles/m.sup.2 for the sectional area of the multi-story quenching tower and contacting the reacted gas with 5 T or more of water per 1 T of the reacted gas fed from the nozzles.

Abstract: When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface. In order to neutralize the charge up electric charge, an apparatus for suppressing electrification of sample in charged beam irradiation apparatus is provided in which electric charge of opposite polarity to that of the charged beam is generated near the sample surface to neutralize the charged beam or charge up electric charge on the sample surface. The electric charge for neutralization is generated by admitting electric charge from a plasma generation unit to the vicinity of the sample surface ionizing gas generated from the sample surface by causing the charged beam to collide the gas or by irradiating electrons from an electron source on the sample surface.

Abstract: When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface. In order to neutralize the charge up electric charge, an apparatus for suppressing electrification of sample in charged beam irradiation apparatus is provided in which electric charge of opposite polarity to that of the charged beam is generated near the sample surface to neutralize the charged beam or charge up electric charge on the sample surface. The electric charge for neutralization is generated by admitting elecrtic charge from a plasma generation unit to the vicinity of the sample surface, ionizing gas generated from the sample surface by causing the charged beam to collide the gas or by irradiating electrons from an electron source on the sample surface.

Abstract: When a charged beam is irradiated on a sample, charge up of electric charge of the same polarity as that of the charged beam is built up on the sample surface. In order to neutralize the charge up electric charge, an apparatus for suppressing electrification of sample in charged beam irradiation apparatus is provided in which electric charge of opposite polarity to that of the charged beam is generated near the sample surface to neutralize the charged beam or charge up electric charge on the sample surface. The electric charge for neutralization is generated by admitting elecrtic charge from a plasma generation unit to the vicinity of the sample surface, ionizing gas generated from the sample surface by causing the charged beam to collide the gas or by irradiating electrons from an electron source on the sample surface.