Abstract: A semiconductor device comprises one or two semiconductor chips, each including an input circuit having a wiring (3) for connecting an input pad (2) to an inner circuit, a first electrostatic protection element (1) electrically connected to the wiring, a second electrostatic protection element (1), and a fuse (4) provided between the wiring (3) and second electrostatic protection element (1). When the semiconductor device has one semiconductor chip, the wiring (3) and second electrostatic protection element (1) are connected to each other through the fuse (4), and when the semiconductor device has said two semiconductor chips, the fuse (4) is disconnected so that the second electrostatic protection element (1) is electrically disconnected from the wiring (3).

Abstract: A semiconductor device comprises one or two semiconductor chips, each including an input circuit having a wiring (3) for connecting an input pad (2) to an inner circuit, a first electrostatic protection element (1) electrically connected to the wiring, a second electrostatic protection element (1), and a fuse (4) provided between the wiring (3) and second electrostatic protection element (1). When the semiconductor device has one semiconductor chip, the wiring (3) and second electrostatic protection element (1) are connected to each other through the fuse (4), and when the semiconductor device has said two semiconductor chips, the fuse (4) is disconnected so that the second electrostatic protection element (1) is electrically disconnected from the wiring (3).

Abstract: An internal voltage generating circuit for generating an internal voltage VINT from an input external voltage VEXT is provided to stabilize the internal voltage. When the external voltage VEXT is less than or equal to a first boundary voltage VT1 or a second boundary voltage VT2 (>VT1), a constant voltage VINTN independent on the external voltage VEXT, which is produced by a constant voltage generator is outputted therefrom. When the external voltage VEXT is greater than or equal to the first boundary voltage VT1 or the second boundary voltage VT2, a variable voltage (>VINTN) linearly increased with an increase in VEXT, which is produced by a variable voltage generator, is outputted therefrom. When a detecting means detects that the external voltage VEXT has been increased to VT2 or higher, the characteristic of the internal voltage is switched from a constant voltage characteristic to a variable voltage characteristic.