Abstract: A circuit device is provided comprising leads and electrical circuitry. The circuit device has a first semiconductor element, a second semiconductor element, first leads electrically connected to the first semiconductor element or the second semiconductor element via fine metal wires and having an end thereof extending outwardly, second leads electrically connected via metal wires to both the first semiconductor element and the second semiconductor element to thus electrically connect the first and second semiconductor elements.

Abstract: It is an object of the present invention to provide a circuit device in which a plurality of circuit elements including a circuit element having a hollow inside are sealed with resin, and to provide a method of manufacturing the same. A circuit device (10) has a first circuit element (13A) having a hollow inside and a plurality of second circuit elements (13B) electrically connected to the first circuit element (13A). The first and second circuit elements (13A) and (13B) are sealed with sealing resin (15). The distances by which the first circuit element (13A) is separated from the second circuit elements (13B) are longer than those by which the second circuit elements (13B) are separated from each other.

Abstract: In order to provide a circuit device 10 where a second circuit element 15B is exposed from a sealing resin 16, a circuit device 10A comprises: an island 12 to whose top a first circuit element 15A is fixedly fitted; a plurality of leads 11 which are extended around the island 12 and electrically connected to the first circuit element 15A; a sealing resin 16 which seals the first circuit element 15A, the island 12, and leads 11 and forms a cavity portion 18; and a second circuit element 15B stored in the cavity portion 18. Accordingly, since the second circuit element 15B can be externally provided, the degree of freedom for mounting can be improved.

Abstract: A circuit device is provided comprising leads and electrical circuitry. The circuit device has a first semiconductor element, a second semiconductor element, first leads electrically connected to the first semiconductor element or the second semiconductor element via fine metal wires and having an end thereof extending outwardly, second leads electrically connected via metal wires to both the first semiconductor element and the second semiconductor element to thus electrically connect the first and second semiconductor elements.

Abstract: A semiconductor device of the present invention has a semiconductor element mounted on a surface of a support substrate, a case member for covering the surface of the support substrate to seal the semiconductor element, fine metal wires as connecting region for electrically connecting the semiconductor element and external terminals extending outside, and a frame member as a fixing component for mechanically fixing the semiconductor element to the support substrate by coming into contact with side surfaces of the semiconductor element.

Abstract: In order to provide a circuit device 10 where a second circuit element 15B is exposed froma sealing resin 16, a circuit device 10A comprises: an island 12 to whose top a first circuit element 15A is fixedly fitted; a plurality of leads 11 which are extended around the island 12 and electrically connected to the first circuit element 15A; a sealing resin 16 which seals the first circuit element 15A, the island 12, and leads 11 and forms a cavity portion 18; and a second circuit element 15B stored in the cavity portion 18. Accordingly, since the second circuit element 15B can be externally provided, the degree of freedom for mounting can be improved.

Abstract: A method of operating a solid state image sensing device having a plurality of electron transfer channels; first and second photodiodes; and first, second, third and fourth electrodes disposed on the electron transfer channels and surrounding the first and second photodiodes. The method includes the step of applying a first potential to the first electrode to transfer electrons from the second photodiode to an electron transfer channel and simultaneously applying a lower potential to the second, third and fourth electrodes to prohibit the electron transfer from the second photodiode to the transfer channel. The method also applies the first potential to the third electrode to transfer electrons from the first photodiode to the electron transfer channel and simultaneously applies the lower potential to the first, second and fourth electrodes to prohibit the electron transfer from the first photodiode to the electron transfer channel.

Abstract: A solid state image sensing device is comprised of a plurality of vertical electrons transfer areas and a plurality of transfer electrodes for receiving different clock signals respectively, a plurality of polysilicon patterns for connecting one of the transfer electrodes in one of the vertical channels to other transfer electrodes receiving the same clock signal in other vertical channels and a plurality of photodiode being alternately disposed to the vertical channels, each of the photodiode being surrounded by a part of each of the polysilicon patterns.