Abstract: The purpose of this invention is to provide a method for manufacturing capacitors free of polarization fatigue even when the treatment is performed at a low temperature. Amorphous layer 32 made of lead zirconate titanate and containing excess lead is formed on lower electrode 13 made of iridium. The amorphous layer is crystallized by a heat treatment to form PZT film 14. Structural transition layer 33 containing excess Pb formed on the surface of PZT film 14 during the aforementioned crystallization is removed by means of dry etching. In this way, a PZT capacitor is obtained.

Abstract: An image forming apparatus of the present invention includes a bias power supply for applying a bias VB to a developer carrier on which a developer is deposited. A charge potential deposited on an image carrier, which faces the developer carrier for forming a latent image thereon, is 400 V or below in absolute value.

Abstract: A developing device for an image forming apparatus includes a developing roller for conveying toner deposited thereon to a developing region where it faces a photoconductive element. A magnet brush roller conveys a two-ingredient type developer, which consists of toner and magnetic particles, deposited thereto to a toner supplying region where it faces the developing roller. In the toner supplying region, only the toner is supplied from the magnet brush roller to the developing roller. The distribution of the number of toner particles for an amount of charge differs from the developing roller to the magnet brush roller.

Abstract: A plurality of types of engine units which have nonvolatile storage units and which have different performances, respectively, can be attached to an image formation apparatus main body in a replaceable manner. A control unit which controls the performance of an overall apparatus based on information stored in the storage units provided in the engine units, respectively, which are attached to the image formation apparatus main body, is provided in the image formation apparatus main body. Therefore, even if the image formation apparatus main body is common, the performance of the overall apparatus related to recording speed or resolution can be changed only by replacing the engine units different in performance. It is also possible to easily deal with various types of apparatuses.

Abstract: A barrier layer (20, 62) for an integrated circuit structure is disclosed. The barrier layer (20, 62) is a refractory metal silicon compound, such as a refractor metal silicon nitride compound, formed in an amorphous state. The barrier layer (20, 62) has a relatively low composition ratio of silicon, and of nitrogen if present, to provide low resistivity in combination with the high diffusion barrier properties provided by the amorphous state of the film. A disclosed example of the barrier layer (20, 62) is a compound of tantalum, silicon, and nitrogen, formed by controlled co-sputtering of tantalum and silicon in a gas atmosphere including nitrogen and argon. The barrier layer (20) may be used to underlie copper metallization (22), or the barrier layer (62) may be part or all of a lower plate in a ferroelectric memory capacitor (70).

Abstract: Monocolor image forming unit includes a developing device and an image carrier cleaning device arranged around an image carrier. A plurality of such the monocolor image forming unit is arrayed laterally along the rotary transport direction of an intermediate transfer member of the belt type to configure a tandem image forming device. In the tandem image forming device, a synthesized toner image is formed on the intermediate transfer member and transferred to a recording medium to form a multicolor image thereon. Among the plurality of monocolor image forming unit contained in the tandem image forming device, at least two monocolor image forming unit each include a toner recycling device for conveying toner collected at the image carrier cleaning device to the developing device.

Abstract: An image forming apparatus of the present invention includes an image carrier made up of a conductive base and a photoconductive layer and a toner carrier to which a bias for development is applied. The toner carrier conveys toner deposited thereon to a developing position where the toner carrier faces the image carrier, thereby developing a latent image formed on the image carrier. The apparatus effects low-voltage development that protects the image carrier from electrostatic fatigue, obviates background contamination, and realizes image density as high as 0.5×10−3 g/cm2 or above in terms of the amount of toner deposition. Further, the apparatus implements faithful development of the latent image by reducing the edge effect. An image forming process unit removable from the apparatus is also disclosed.

Abstract: An FeRAM in which sensing occurs without a dummy cell, using an unselected bitline as a reference. The read cycle includes two opposed pulses on the drive line: the first pulse provides a data-dependent signal out of the selected cell, and the second pulse restores the bit line to a level such that the DC bias voltage on an unselected bitline provides an optimal reference.

Abstract: A thin film resistor (302) for use in inkjet printer heads that has high resistant and low absolute value of TCR.

Abstract: A developing device for an image forming apparatus includes a developing roller for conveying toner deposited thereon to a developing region where it faces a photoconductive element. A magnet brush roller conveys a two-ingredient type developer, which consists of toner and magnetic particles, deposited thereto to a toner supplying region where it faces the developing roller. In the toner supplying region, only the toner is supplied from the magnet brush roller to the developing roller. The distribution of the number of toner particles for an amount of charge differs from the developing roller to the magnet brush roller.

Abstract: A ferroelectric capacitor electrode contact structure comprising an insulator (304) placed over a substrate (302), the insulator (304) containing a source plug (310) and a drain contact (312). An upper plug layer (322) is place over and electrically connected to a drain contact (312). A multi-component oxide layer (324) is placed over an upper plug layer (322). A bottom electrode (326) is placed over a multi-component oxide layer 324. Multi-component oxide layer (324) prevents the silicidation of the bottom electrode (326) of a ferroelectric capacitor electrode contact structure while surprisingly maintaining an ohmic contact from the substrate (302) through the drain contact (312) through the upper plug layer (322) through the multi-component oxide layer (324) to the bottom electrode 326.

Abstract: To provide a method that can be used to form a high-qualility ferroelectric film by forming good nuclei when using the sputtering method to manufacture a PZT capacitor or other forroelectric capacitors using Ir or other electrode substances in addition to Pt for the electrode. In the method for manufacturing a PZT ferroelectric capacitor CAP, after titanium film 31 is deposited on Ir electrode 6, lead oxide 32 is deposited at a substrate temperature higher than the crystallization temperature of lead titanate using the sputtering method. Lead zirconate titanate 34 is then deposited at a substrate temperature higher than the aforementioned substrate temperature using the sputtering temperature. Afterwards, a heat treatment of the deposited film is performed to produce PZT film 17.

Abstract: An image forming apparatus includes a latent image bearing member to bear an electrostatic latent image, and a developer bearing member to bear a developer, in which the electrostatic latent image is formed on the latent image bearing member by first uniformly charging the latent image bearing member and then by performing an optical writing operation. The electrostatic latent image is visualized by supplying the developer borne on the developer bearing member to the latent image bearing member. A lubricant for reducing a friction coefficient of a surface of the latent image bearing member is supplied to the latent image bearing member and the lubricant has a charging polarity opposite to that of the developer. The friction coefficient of the latent image bearing member is maintained such that adhering of the developer to a background part of the latent image is prevented as a result of supplying the lubricant to the latent image bearing member.

Abstract: Ferroelectric memory with one-capacitor/one-transistor cells and a reference cell with double the capacitance plus a sense amplifier for comparing transient currents in resistors at the sense amplifier inputs. The reference cell includes a diode to prevent reference capacitor polarization switching.

Abstract: A ferroelectric capacitor electrode contact structure comprising an insulator (4) placed over a substrate (2) and containing a transistor source (6) and transistor drain (8) between the substrate (2) and the insulator (4). The insulator (4) contains a source plug (10) and a conductive drain plug (12). The transistor source (6) is electrically connected to the source plug (10). The transistor drain (8) is electrically connected to the conductive drain plug (12). A transistor gate (14) is between the source plug (10) and a conductive drain plug (12) and is contained by the insulator (4). Metal wiring (16) is electrically connected to the source plug (10). A barrier film (18) is placed over the insulator (4) and the conductive drain plug (12). The bottom electrode (20) is placed over the barrier film (18). The ferroelectric layer (22) is placed over the bottom electrode (20). The top electrode (24) is placed over the ferroelectric layer (22).

Abstract: An image forming apparatus including a cylindrical image carrier configured to carry an electrostatic latent image while rotating, and a cylindrical developer carrier configured to bear a developer and supply the developer to the image carrier by contacting the image carrier at a nip while rotating, wherein the surface of the image carrier has a friction coefficient of from about 0.1 to about 0.4. The image carrier may be an endless belt.

Abstract: A metal oxide capacitor is manufactured by sequentially laminating a metal oxide film and a secon electrode on a first electrode. The metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.

Abstract: A dielectric capacitor is provided which has a reduced leakage current. The surface of a first electrode (38) of the capacitor is electropolished and a dielectric film (40) and a second electrode (37) are successively laminated on it. The convex parts pointed end (38a) existing on the surface of the first electrode is very finely polished uniformly by dissolving according to electropolishing, a spherical curved surface in which the radius of curvature has been enlarged is formed, and the surface of the first electrode is flattened. Therefore, concentration of electrolysis can be prevented during the operation at the interface of the first electrode and the dielectric film, and the leakage current can be reduced considerably.

Abstract: A method for forming a ferroelectric material film, more particularly a lead zirconate titanate (PZT) film by the sol-gel method wherein a lowered oxidative sintering temperature may be adopted in preparing the ferroelectric material film with a perovskite crystalline structure, thereby reducing the risk of oxidation of metal electrodes and other circuits when the ferroelectric material film is employed as a dielectric in semiconductor devices, such as in a capacitor, for example. The method contemplates the preparation of a raw material solution containing an organometallic compound of a metallic element forming the ferroelectric material film, alkanolamine and/or stabilizer comprising a .beta.-diketone, with the concentration of the stabilizer being sufficient to provide a mole ratio to the total metal atoms of (stabilizer/total metal atoms)>3.

Abstract: A capacitor and electrode structure comprising a PZT ferroelectric layer 17 with a primary component (Pb) and secondary component (Ti), a lower electrode layer 16 formed on the underside of the ferroelectric layer and made up of a special element (Pt) and Ti, and compounds thereof, and a diffusion barrier layer 18 which is formed on the underside of the lower electrode layer and which functions as a diffusion barrier with respect to Pb. The capacitor and the electrode structure, which may be a component of a semiconductor memory device, suppress fluctuations in the composition of the ferroelectric layer in PZT, etc., so as to maintain the intended performance of the PZT ferroelectric layer, thereby simplifying and stabilizing film fabrication, and preventing the degradation of electrical characteristics and adverse effects on lower layers.