Abstract: Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films are more easily broken by energization than those in the first cells, and the number of which is smaller than that of the first cells. At a time of driving the semiconductor element, a common gate drive voltage is applied to gate electrodes of the first cells and the second cells. An electrical characteristic is measured to detect failure of the second cells due to energization at the time of driving. The gate electrodes of the failed second cells are electrically isolated from the gate electrodes of the first cells so that the gate drive voltage is not applied to the failed second cells. The failure of the first cells is predicted based on the failure of the second cells.

Abstract: In a data storage/access network system for zooming image, a data extraction unit for extracting a portion of image data in accordance with a request from a client machine is arranged in a server machine. When a request for enlarging a partial region is issued from the client side, only image data in the requested partial region is dynamically extracted on the server and transferred instead of transferring the entire file including the corresponding image data. With this arrangement, the amount of data to be transferred from the server to the client can be decreased.

Abstract: A method of manufacturing a hose coupling from an intermediate blank material, the hose coupling having an inner tube or tubular nipple portion, an outer tube or tubular sleeve portion and a head portion, all formed by plastic deformation from an intermediate blank material. The head portion is provided with a bore at an end opposite the end where the nipple portion and the sleeve portion are joined. In addition, the head portion is internally provided with a female thread and a conical seal portion.