Abstract: A game device controls a first virtual camera and a second virtual camera so that the first virtual camera and the second virtual camera are situated within an object space to be point-symmetrical, line-symmetrical, or plane-symmetrical with respect to a reference point, a reference line, or a reference plane that is defined by a first position linked to a first character and a second position linked to a second character. The game device determines whether to display the object space photographed by the first virtual camera or the object space photographed by the second virtual camera as a game image based on a selection instruction issued by a player.

Abstract: A game device controls a first virtual camera and a second virtual camera so that the first virtual camera and the second virtual camera are situated within an object space to be point-symmetrical, line-symmetrical, or plane-symmetrical with respect to a reference point, a reference line, or a reference plane that is defined by a first position linked to a first character and a second position linked to a second character. The game device determines whether to display the object space photographed by the first virtual camera or the object space photographed by the second virtual camera as a game image based on a selection instruction issued by a player.

Abstract: According to this invention, illumination light for illuminating a mask on which a micropattern is drawn is inclined at an angle corresponding to a numerical aperture of an optical projection lens located below the mask with respect to an optical axis. The illumination light is obliquely incident on the mask to expose the micropattern on an object located below the optical projection lens.

Abstract: A highly sensitive positive resist mixture which comprises a resist having a carboxyl group at the side chain and which is decomposable by high energy rays constituted by a polymer having the formula I ##STR1## where R.sub.1, R.sub.2, . . . R.sub.n represent alkyl groups, halogenated alkyl groups, or aryl groups having five or fewer carbon atoms, or --COORa or --CORb (where Ra and Rb are alkyl groups or halogenated alkyl or aryl groups having five or fewer carbon atoms), and when ##EQU1## m.sub.c /M is in the range of 0.01 to 1.0 and m.sub.1 /M, m.sub.2 /M, . . . m.sub.n /M are respectively in the range of 0.99 to 0, and an additive selected from the group consisting of oxides, halides and organic acid salts of bivalent metals.

Abstract: In a fine pattern forming method for use in the manufacture of semiconductor integrated circuits, optical integrated circuits, Josephson elements, and so forth, a positive resist mixture is used which is composed of a resist having a carboxyl group in the side chain and an additive which is an oxide, halide, or organic acid salt of a bivalent metal and which, when heated, forms Ionomer to produce thermal crosslinks. The positive resist mixture is developed using a developer having carboxylic acid mixed in an organic solvent, thereby permitting the formation of an ultra-fine and high precision pattern.

Abstract: An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.

Abstract: A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.

Abstract: The invention provides a positive resist comprising a copolymer of 60 to 90 mol % of phenylmethacrylate and 40 to 10 mol % of methacrylic acid.The invention also provides a method for forming a pattern of a positive resist comprising the steps of:forming on a substrate a film of a positive resist which comprises a copolymer of 60 to 90% of phenylmethacrylate and 40 to 10 mol % of methacrylic acid;pre-baking said positive resist film to cross-link said copolymer;selectively radiating said positive resist film which has been pre-baked with a high energy beam to form a latent image; anddeveloping said latent image with a developing solvent. Said positive resist has excellent resistance to dry etching and high sensitivity, and shows good adhesion to a substrate and can realize high resolution.