Abstract: A measuring device for measuring an inspection target on the basis of vibration generated when the inspection target has been irradiated with laser light includes a condensing position deriving portion configured to derive an amount of adjustment of a distance between condensing lenses of a laser condensing unit configured to condense the laser light on the basis of a distance between a laser device configured to radiate the laser light and an irradiation location of the laser light and a communicating portion configured to transmit control information including information representing the amount of adjustment to the laser condensing unit.

Abstract: A paper transporting apparatus includes a pair of transport rollers including a first transport roller, a second transport roller, a first roller shaft inserted through the first transport roller, a second roller shaft inserted through the second roller, an urging member which urges the second roller shaft towards the first roller shaft, and a cover member arranged to be opened and closed. The urging member is attached to an inner surface of the cover member to support the second roller shaft, and urge the second roller shaft when the cover member is closed.

Abstract: Method of manufacturing semiconductor device including forming inter-layer insulating film on semiconductor substrate. First metal film is formed on inter-layer insulating film. First resist is formed on first metal film and patterned. Anisotropic etching performed on first metal film using first resist as mask. First resist is removed and second metal film is formed on inter-layer insulating film to cover remaining first metal film. Second resist is formed on second metal film in area where first metal film exists on inter-layer insulating film and part of area where first metal film does not exist. Anisotropic etching is performed on second metal film using second resist as mask and bonding pad having first metal film and second metal film, and upper layer wiring having second metal film and not first metal film. Second resist is removed. Surface protection film covering bonding pad is formed. Pad opening is formed on bonding pad.

Abstract: A method of manufacturing a semiconductor device comprises: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal f

Abstract: A non-magnetic one-component developer comprises a binder resin and a colorant, and has a volume-average particle diameter (dv) in a range of 5-15 .mu.m, a ratio (dv/dn) of the volume-average particle diameter (dv) to the number-average particle diameter (dn) in a range of 1.00-1.40, a quotient (Sc/Sr) obtained by dividing the area (Sc) of a circle supposing the absolute maximum length of a particle is a diameter by the real projected area (Sr) of the particle in a range of 1.00-1.30, a product (AxdnxD) of the specific surface area (A) (m.sup.2 /g) as measured in accordance with the BET method, the number-average particle diameter (dn) (.mu.m) and the true specific gravity (D) in a range of 5-10, and a ratio (Q/A) of the charge level (Q) (.mu.c/g) to the specific surface area (A) in a range of 80-150. The developer is substantially spherical from both conditions of Sc/Sr and AxdnxD, and is suitable for use in a development process in which cleaning is conducted at the same time as development.