Abstract: A semiconductor device includes a fuse circuit, which includes a first conductive region and a second conductive region. The first conductive region has a multi-layered structure, and the second conductive region has a less layered structure than the first conductive region.

Abstract: A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a surface of the semiconductor substrate. The fuse is formed on the first insulating layer. The diffusion layer is formed on the surface of the semiconductor substrate. The diffusion layer is applied to a fixed potential. The second insulating layer is formed on the fuse. The conductive pattern is formed on the second insulating layer. The conductive pattern surrounds the fuse. Further, the conductive pattern is electrically connected to the diffusion layer.

Abstract: A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a surface of the semiconductor substrate. The fuse is formed on the first insulating layer. The diffusion layer is formed on the surface of the semiconductor substrate. The diffusion layer is applied to a fixed potential. The second insulating layer is formed on the fuse. The conductive pattern is formed on the second insulating layer. The conductive pattern surrounds the fuse. Further, the conductive pattern is electrically connected to the diffusion layer.

Abstract: An ESD-protecting circuit is connected between a terminal pad and an internal circuit formed in an LSI. The ESD-protecting circuit includes a conductive line connected to the terminal pad; first and second protecting elements, connected to the conductive line; and first and second resistive elements formed on the. The conductive line has a slit that divides the conductive line so that the first and second resistive elements have equal resistive values.

Abstract: A semiconductor device includes a fuse circuit, which includes a first conductive region and a second conductive region. The first conductive region has a multi-layered structure, and the second conductive region has a less layered structure than the first conductive region.

Abstract: A fuse layout (10) constructed of a wiring electrode made of a barrier metal layer of a high melting point and a main wiring metal layer comprises a plurality of fusion-type fuse sections (11 and 12) connected to each other in series and a plurality of fuse pads (13, 14, and 15) for drawing current to the respective fuse sections. If only one of the fuse sections is cut, the whole fuse layout is put in the “cut condition” so that the total fraction defective of incomplete cut of the fuse layout is largely reduced. Even if the barrier metal layer is not cut to remain, it has a high resistance so that the fuse resistance of the whole fuse layout becomes very high and the fuse layout is considered in the “cut condition”.

Abstract: An ESD-protecting circuit is connected between a terminal pad and an internal circuit formed in an LSI. The ESD-protecting circuit includes first and second conductive lines, connected in parallel to the terminal pad; first and second protecting elements, connected to the first and second conductive lines, respectively; and first and second resistive elements formed on the first and second conductive lines, respectively.

Abstract: An output buffer circuit for use with a power source having first and second power source terminals includes an output terminal, a first transistor connected between the first power source terminal and the output terminal and a second transistor connected between the second power source terminal and the output terminal. A control signal which shifts gradually from the potential at the second power source terminal to the potential at the first power source terminal is applied to the gate of the second transistor. As a consequence, undesirable noises are well suppressed without any substantial degradation in high speed operation.