Abstract: A method for manufacturing a semiconductor device, comprises the steps of sequentially forming a gate insulation film, a gate electrode film of polycrystalline silicon and a self-alignment film of silicon nitride on a semiconductor substrate having one conductivity type, patterning the gate electrode film and the self-alignment film in an identical electrode pattern, ion-implanting an impurity of an opposite conductivity type into the substrate using the silicon nitride pattern as a mask, thereby forming source and drain regions, forming an insulation layer on the entire surface of the substrate including the silicon nitride pattern, performing annealing, removing the remaining insulation layer which is located on the silicon nitride pattern, removing the silicon nitride pattern so as to expose the gate electrode pattern, and forming a metal film on the exposed gate electrode pattern.

Abstract: The invention provides a mask structure for X-ray lithography, having a mask substrate of an X-ray transmitting material, a mask pattern of an X-ray absorbing material which is formed on the surface of the mask substrate or therein, a support ring for supporting the rear periphery of the mask substrate, and a lattice-shaped metal film embedded in a lattice-shaped slit in the mask substrate. The mask structure with a large area has a dimensional stability.