Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: To provide a photomask capable of preventing a foreign matter generation in using the photomask, and an exposure method using this photomask. The photomask includes a transparent substrate 2; a transfer pattern 4 formed in a main region 3 of a center portion of the transparent substrate 2; a light-shading band region 5 provided adjacent to the main region 3 in the outer peripheral region of the main region 3; and a pellicle 6 formed by adhering a pellicle film 6a to a pellicle frame 6b by an adhesive 8a, wherein this pellicle 6 is adhered onto a light-shading region 7 consisting of a light-shading film formed in the outer peripheral region of the main region 3, through an adhesive 8b.

Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: The present invention provides a mechanism capable of removing a minute particle adhered to a fine pattern or the like without giving damages to the pattern or the like. After being installed on a device which can perform rotating operation, the high viscosity liquid is dropped on an upper surface of an object such as a photomask to be cleaned by a liquid supply part, and then the photomask is rotated to move the high viscosity liquid. During the movement of the high viscosity liquid, a particle adhered to the object such as the photomask is contained in the high viscosity liquid, and is removed. Further, the particle thus contained in the liquid is prevented from re-adhering to the object such as the photomask by controlling a zeta potential of the high viscosity liquid, and is removed from the object such as the photomask.

Abstract: To provide a photomask capable of preventing a foreign matter generation in using the photomask, and an exposure method using this photomask. The photomask includes a transparent substrate 2; a transfer pattern 4 formed in a main region 3 of a center portion of the transparent substrate 2; a light-shading band region 5 provided adjacent to the main region 3 in the outer peripheral region of the main region 3; and a pellicle 6 formed by adhering a pellicle film 6a to a pellicle frame 6b by an adhesive 8a, wherein this pellicle 6 is adhered onto a light-shading region 7 consisting of a light-shading film formed in the outer peripheral region of the main region 3, through an adhesive 8b.

Abstract: The present invention provides a mechanism capable of removing a minute particle adhered to a fine pattern or the like without giving damages to the pattern or the like. After being installed on a device which can perform rotating operation, the high viscosity liquid is dropped on an upper surface of an object such as a photomask to be cleaned by a liquid supply part, and then the photomask is rotated to move the high viscosity liquid. During the movement of the high viscosity liquid, a particle adhered to the object such as the photomask is contained in the high viscosity liquid, and is removed. Further, the particle thus contained in the liquid is prevented from re-adhering to the object such as the photomask by controlling a zeta potential of the high viscosity liquid, and is removed from the object such as the photomask.

Abstract: Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.