Abstract: According to an embodiment of the present disclosure, the cleaning apparatus includes a cleaning tank body having a body opening and a cleaning space; a lid provided to be openable and closable with respect to the body opening; a mounting stage provided in the cleaning space placing a shell of a wafer storage container; a first ejector that ejects a cleaning liquid into a storage space of the shell; a second ejector that ejects the cleaning liquid into an outer portion of the shell; a first discharge port that discharges the cleaning liquid ejected into the storage space of the shell; a second discharge port that discharges the cleaning liquid that has passed through the outer portion of the shell; and a particle counter that measures particles in the cleaning liquid discharged by the first discharge port.

Abstract: According to one embodiment, a substrate processing apparatus and a substrate processing method that can improve the quality of substrates are provided.

Abstract: According to one embodiment, a substrate processing apparatus and a substrate processing method that can improve the quality of substrates are provided.

Abstract: According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

Abstract: According to the embodiment, a substrate treating device 1 that rotates and washes a substrate, the device includes a spinning holding mechanism for holding a substrate, a treatment liquid supply nozzle for supplying a treatment liquid to the substrate, a shielding plate that is arranged opposite to the substrate held by the spinning holding mechanism and that moves in a contact/separate direction with respect to the substrate, a shielding plate rotating mechanism for rotating the shielding plate, and a control device for controlling the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from a standby position when the treatment liquid is supplied from the treatment liquid supply nozzle. It is possible to prevent contamination of a substrate during the treatment process.

Abstract: According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract: A music box includes a bed plate, a vibration plate, a plurality of projections, and a flange part. The vibration plate has one end portion fixed to the bedplate and another end portion provided with a plurality of vibration reeds extending in a first direction. The plurality of projections is configured to contact the plurality of vibration reeds and corresponds to the plurality of vibration reeds. The flange part protrudes from the bedplate in the first direction and confronts the plurality of vibration reeds.

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract: An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.

Abstract: A semiconductor manufacturing apparatus 1 includes a wafer 10, a FOUP 20 that is a sealed container retaining the wafer 10 therein, an etching apparatus 30 that is a semiconductor processing apparatus, and an EFEM 40 that carries the wafer in a sealed condition between the FOUP and the etching apparatus. The FOUP includes a front door 20a, a sensor unit 21b detecting at least one of a temperature, a humidity, and a gas concentration, and a transmitter 25 that transmits information detected by the sensor unit. A receiver 31 receives information from the transmitter, and supplies the information to a purging unit 43. The purging unit performs purging until the temperature, etc., in the FOUP satisfies a reference value set beforehand.

Abstract: The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6.

Abstract: An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.

Abstract: The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6.

Abstract: An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulator 20 is an inert gas to which H2 has been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.

Abstract: A method of producing rolling elements for a rolling bearing comprises mixing to process rounded elements made of steel balls and spherical rolling elements having outer diameter portion portion becoming a rolling contact face. The rolling contact face has curvatures in an axial direction and a radial direction normal to the axial direction, and has at least one plane. The thus mixed elements are placed and processed in a space between two processing boards opposing each other via the determined space. Thereby, the surfaces of the rounded balls and the rolling elements are processed to be rounded.

Abstract: A method of producing rolling elements for a rolling bearing comprises mixing to process rounded elements made of steel balls and spherical rolling elements having outer diameter portion portion becoming a rolling contact face. The rolling contact face has curvatures in an axial direction and a radial direction normal to the axial direction, and has at least one plane. The thus mixed elements are placed and processed in a space between two processing boards opposing each other via the determined space. Thereby, the surfaces of the rounded balls and the rolling elements are processed to be rounded.

Abstract: A method of producing rolling elements for a rolling bearing comprises mixing to process rounded elements made of steel balls and spherical rolling elements having outer diameter portion portion becoming a rolling contact face. The rolling contact face has curvatures in an axial direction and a radial direction normal to the axial direction, and has at least one plane. The thus mixed elements are placed and processed in a space between two processing boards opposing each other via the determined space. Thereby, the surfaces of the rounded balls and the rolling elements are processed to be rounded.