Patents by Inventor Katsuhisa Shibuya

Katsuhisa Shibuya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor integrated circuit device
    Patent number: 7923361
    Abstract: The resist film after high-concentration ion implantation has a hard modified layer on the surface thereof, and is difficult to remove in the temperature region as low as about 150 degrees centigrade. This is because the etching rate of the modified layer sharply decreases with a decrease in temperature. The temperature is increased up to about 250 degrees centigrade to perform an ashing treatment in vacuum in order to increase the etching rate of the modified layer. Then, there occurs a popping phenomenon that the inside resist solvent swells and breaks. The residues scattered thereby of the modified layer and the like seize the wafer surface, and also become difficult to remove even in the subsequent cleaning.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: April 12, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Katsuhisa Shibuya, Hiromichi Waki, Naoto Aida
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    Publication number: 20090325368
    Abstract: The resist film after high-concentration ion implantation has a hard modified layer on the surface thereof, and is difficult to remove in the temperature region as low as about 150 degrees centigrade. This is because the etching rate of the modified layer sharply decreases with a decrease in temperature. The temperature is increased up to about 250 degrees centigrade to perform an ashing treatment in vacuum in order to increase the etching rate of the modified layer. Then, there occurs a popping phenomenon that the inside resist solvent swells and breaks. The residues scattered thereby of the modified layer and the like seize the wafer surface, and also become difficult to remove even in the subsequent cleaning.
    Type: Application
    Filed: May 29, 2009
    Publication date: December 31, 2009
    Inventors: Katsuhisa SHIBUYA, Hiromichi WAKI, Naoto AIDA