Patents by Inventor Katsuichi Akiyoshi

Katsuichi Akiyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200196389
    Abstract: A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.
    Type: Application
    Filed: December 2, 2019
    Publication date: June 18, 2020
    Inventors: Tomohiro UENO, Takayuki AOYAMA, Mao OMORI, Takahiro KITAZAWA, Katsuichi AKIYOSHI
  • Patent number: 10679874
    Abstract: Pressure in a chamber receiving a semiconductor wafer is reduced to a level less than atmospheric pressure. The semiconductor wafer is subjected to heat treatment in a reduced-pressure atmosphere by being irradiated with a flash of light. A leak determination part determines that a leak occurs at the chamber if pressure in the chamber does not reach target pressure while a time period passed since start of reduction of pressure in the chamber exceeds a threshold set in advance. A leak at the chamber is detected by monitoring a time period passed since start of reduction of pressure in the chamber. This makes it possible to determine the presence or absence of a leak at the chamber with a simple structure without requiring installation of a new hardware structure.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: June 9, 2020
    Assignee: SCREEN HOLDINGS CO., LTD.
    Inventors: Mao Omori, Katsuichi Akiyoshi
  • Publication number: 20190267261
    Abstract: A semiconductor wafer is preheated by halogen lamps; thereafter, the semiconductor wafer is heated by irradiation with flash of light from flash lamps. A radiation thermometer measures the temperature of the back surface of the semiconductor wafer at predetermined sampling intervals and acquires a plurality of temperature measurement values. Of the plurality of temperature measurement values, a temperature integrated value is calculated by integrating a set number of the temperature measurement values acquired from the start point of integration after a start time of irradiation of the flash light. When the calculated temperature integrated value falls out of the range between the upper limit value and the lower limit value, the semiconductor wafer is determined to be broken at the time of flash light irradiation.
    Type: Application
    Filed: December 14, 2018
    Publication date: August 29, 2019
    Inventors: Katsuichi Akiyoshi, Mao OMORI, Shinichi IKEDA
  • Publication number: 20190067051
    Abstract: Pressure in a chamber receiving a semiconductor wafer is reduced to a level less than atmospheric pressure. The semiconductor wafer is subjected to heat treatment in a reduced-pressure atmosphere by being irradiated with a flash of light. A leak determination part determines that a leak occurs at the chamber if pressure in the chamber does not reach target pressure while a time period passed since start of reduction of pressure in the chamber exceeds a threshold set in advance. A leak at the chamber is detected by monitoring a time period passed since start of reduction of pressure in the chamber. This makes it possible to determine the presence or absence of a leak at the chamber with a simple structure without requiring installation of a new hardware structure.
    Type: Application
    Filed: July 27, 2018
    Publication date: February 28, 2019
    Inventors: Mao OMORI, Katsuichi AKIYOSHI
  • Patent number: 5539855
    Abstract: A substrate temperature measuring apparatus includes a temperature signal generating device provided in contact with a substrate for generating a signal indicating its own temperature which follows the temperature of the substrate by thermal conduction, a device connected and responsive to the output of the temperature signal generating device for determining whether contact between the substrate and the temperature signal generating device is appropriate or not, and a device for carrying out a predetermined process according to a determination result of the determining device. It is possible to apply heat treatment to the substrate, to prevent the substrate from being subjected to heat treatment, or to give a necessary alarm according to the determination result.
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: July 23, 1996
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Mitsukazu Takahashi, Takatoshi Chiba, Katsuichi Akiyoshi