Patents by Inventor Katsuji Inagaki

Katsuji Inagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Noble metal paste for bonding of semiconductor element
    Patent number: 10366963
    Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: July 30, 2019
    Assignee: TANAKA KIKINZOKU KOGYO K. K.
    Inventors: Masayuki Miyairi, Nobuyuki Akiyama, Katsuji Inagaki, Toshinori Ogashiwa
  • Precious metal paste for bonding semiconductor element
    Patent number: 9539671
    Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: January 10, 2017
    Assignee: Tanaka Kikinzoku K.K.
    Inventors: Masayuki Miyairi, Nobuyuki Akiyama, Katsuji Inagaki, Toshinori Ogashiwa
  • NOBLE METAL PASTE FOR BONDING OF SEMICONDUCTOR ELEMENT
    Publication number: 20130168437
    Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.
    Type: Application
    Filed: September 30, 2011
    Publication date: July 4, 2013
    Inventors: Masayuki Miyairi, Nobuyuki Akiyama, Katsuji Inagaki, Toshinori Ogashiwa