Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract: A conductive substrate includes substrate made of a resin material, and a conductive layer formed on the substrate by baking a conductive paste which is coated on the substrate at a predetermined position, wherein the conductive layer is formed through baking by applying second laser light to the conductive paste of which a position on the substrate is detected based on a difference in reflectance depending on the application positions of first laser light applied to the substrate.

Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Abstract: A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Abstract: An optical recording/reproducing apparatus includes an optical pickup and a control section. The optical pickup includes: a detecting section; an optical system that radiates light from a light source onto an optical recording medium as near-field light by a condenser lens having a numerical aperture of 1 or more, and introduces light reflected by the optical recording medium toward the detecting section; and a drive section that drives the condenser lens. The optical recording/reproducing apparatus performs control for recording and/or reproducing onto/from the optical recording medium based on an optical output detected by the detecting section of the optical pickup. The optical system includes a beam splitter that reflects both P-and S-polarized components of reflected light from the optical recording medium, and a separating section that separates the P-and S-polarized components reflected by the beam splitter.

Abstract: A watchcase coupling structure including an outer rim and coupling pins adapted to couple a front cap and a rear cap, wherein the coupling pins may be mounted in the outer rim and the rear cap without relying upon a threading-in method. Each of these coupling pins may take various configurations. Specifically, it may be the one which has an eccentricity by an amount corresponding to a margin required to adjust the force with which the packing interposed between the front cap and the rear cap is clamped or the one which is provided on its head with a slant portion to facilitate the operation of mounting. Furthermore, it may be the one which is provided on the front end with a notch or the like or the one which has a flange to prevent the pin from falling off.