Patents by Inventor Katsuji Takasu
Katsuji Takasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6077718Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.Type: GrantFiled: March 20, 1995Date of Patent: June 20, 2000Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Hisanori Tsuda, Masafumi Sano, Yutaka Hirai
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Patent number: 5769950Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.Type: GrantFiled: May 25, 1995Date of Patent: June 23, 1998Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Hisanori Tsuda, Masafumi Sano, Yutaka Hirai
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Patent number: 5273919Abstract: A method of producing a thin film field effect transistor. An insulating thin film layer is formed on a gate electrode subsequent to the gate electrode being formed on a substrate. A multilayer structure is formed on the insulating thin film layer subsequent to the insulating thin film layer being formed on the gate electrode by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline material layers.Type: GrantFiled: April 16, 1992Date of Patent: December 28, 1993Assignee: Canon Kabushiki KaishaInventors: Masafumi Sano, Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai
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Patent number: 5261961Abstract: A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.Type: GrantFiled: July 8, 1992Date of Patent: November 16, 1993Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Hisanori Tsuda, Masafumi Sano, Yutaka Hirai
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Patent number: 4987460Abstract: A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.Type: GrantFiled: September 13, 1989Date of Patent: January 22, 1991Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
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Patent number: 4921722Abstract: A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.Type: GrantFiled: October 11, 1985Date of Patent: May 1, 1990Assignee: Canon Kabushiki KaishaInventors: Yoshiyuki Osada, Hisanori Tsuda, Masafumi Sano, Satoshi Omata, Katsuji Takasu, Yutaka Hirai
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Patent number: 4920387Abstract: A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 10.sup.16 cm.sup.-3.eV.sup.-1 or less.Type: GrantFiled: September 13, 1989Date of Patent: April 24, 1990Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
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Patent number: 4916510Abstract: A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..Type: GrantFiled: March 11, 1988Date of Patent: April 10, 1990Assignee: Canon Kabushiki KaishaInventors: Masafumi Sano, Katsuji Takasu, Hisanori Tsuda, Yutaka Hirai
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Patent number: 4914490Abstract: A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and hydrogen atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3 .multidot.eV.sup.-1 or less.Type: GrantFiled: January 30, 1989Date of Patent: April 3, 1990Assignee: Canon Kabushiki KaishaInventors: Katsuji Takasu, Masafumi Sano, Hisanori Tsuda, Yutaka Hirai
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Patent number: 4893154Abstract: An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.Type: GrantFiled: February 8, 1989Date of Patent: January 9, 1990Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Masafumi Sano, Hisanori Tsuda, Katsuji Takasu
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Patent number: 4675731Abstract: In an angiography, it is desirable to improve the resolution of the subtraction image. One approach to this requirement is attempted to subtract a series of the optical image by an optical subtraction method. A diagnostic apparatus includes at least first and second electrooptic devices, into which first and second optical images originated from a plurality of optical images are exposed so as to be stored therein, and thereafter from which those first and second optical images are optically read out, and an optical image subtraction device in which the above-mentioned first and second optical images are optically subtracted.Type: GrantFiled: August 13, 1986Date of Patent: June 23, 1987Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Katsuji Takasu, Kiyoshi Okazaki
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Patent number: 4645684Abstract: A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.Type: GrantFiled: October 3, 1985Date of Patent: February 24, 1987Assignee: Canon Kabushiki KaishaInventors: Yoshiyuki Osada, Hisanori Tsuda, Masafumi Sano, Satoshi Omata, Katsuji Takasu, Yutaka Hirai
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Patent number: 4626449Abstract: A method for forming a deposition film by introducing a starting gas for formation of a deposition film into a reaction chamber housing a substrate therein and forming a deposition film on the substrate by irradiation with light comprises performing deposition by using a monochromatic light and a continuous polychromatic light in combination and projecting the lights on the substrate on which the deposition film is to be formed.Type: GrantFiled: October 28, 1985Date of Patent: December 2, 1986Assignee: Canon Kabushiki KaishaInventors: Yutaka Hirai, Hiroshi Echizen, Masafumi Sano, Hisanori Tsuda, Katsuji Takasu