Patents by Inventor Katsujiro Arai

Katsujiro Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device
    Patent number: 5744373
    Abstract: An epitaxial layer is formed on a semiconductor substrate, and a CMOS circuit or a functional device is formed on an impurity layer deeply extended to reach the semiconductor substrate and on an epitaxial layer region surrounded by the impurity layer. Thus the devices are substantially equivalent to those formed on a silicon substrate having no epitaxial layer. A CMOS circuit or functional device formed on an impurity layer that does not reach the semiconductor substrate and on the epitaxial layer region is made electrically independent of the semiconductor substrate, and hence can be deemed to be substantially equivalent to the case when the epitaxial layer is made to serve as a substrate.An epitaxial layer of a conductivity type reverse to that of a silicon substrate is used, and hence a plurality of functional devices can be formed respectively thereon at the same time.
    Type: Grant
    Filed: September 20, 1994
    Date of Patent: April 28, 1998
    Assignee: Matsushita Electronics Corporation
    Inventor: Katsujiro Arai
  • Semiconductor device with isolated transistors
    Patent number: 5374840
    Abstract: An epitaxial layer is formed on a semiconductor substrate, and a CMOS circuit or a functional device is formed on an impurity layer deeply extended to reach the semiconductor substrate and on an epitaxial layer region surrounded by the impurity layer. Thus the devices are substantially equivalent to those formed on a silicon substrate having no epitaxial layer. A CMOS circuit or functional device formed on an impurity layer that does not reach the semiconductor substrate and on the epitaxial layer region is made electrically independent of the semiconductor substrate, and hence can be deemed to be substantially equivalent to the case when the epitaxial layer is made to serve as a substrate.An epitaxial layer of a conductivity type reverse to that of a silicon substrate is used, and hence a plurality of functional devices can be formed respectively thereon at the same time.
    Type: Grant
    Filed: March 15, 1994
    Date of Patent: December 20, 1994
    Assignee: Matsushita Electronics Corporation
    Inventor: Katsujiro Arai