Patents by Inventor Katsuki Tsuda

Katsuki Tsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Parasitic PNP transistor with crystal defect layer in the emitter region
    Patent number: 5604359
    Abstract: A transistor comprising a P-type high concentration impurity diffusion layer which can also serve as an emitter for a parasitic PNP transistor wherein a layer of crystal defect obtained by ion implantation of inert impurity atoms or a compound thereof is arranged in the P-type high concentration impurity diffusion layer thereby decreasing the current amplification rate of the parasitic transistor.
    Type: Grant
    Filed: January 24, 1994
    Date of Patent: February 18, 1997
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazushi Naruse, Hiroaki Yamamoto, Toshio Naka, Katsuki Tsuda