Patents by Inventor Katsumara Ikubo

Katsumara Ikubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing an active matrix substrate
    Patent number: 5286659
    Abstract: A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.
    Type: Grant
    Filed: December 26, 1991
    Date of Patent: February 15, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yasuhiro Mitani, Katsumara Ikubo, Yasunori Shimada, Hirohisa Tanaka, Hiroshi Morimoto, Yutaka Nishi, Tomohiko Yamamoto, Kenichi Nishimura