Abstract: One object of the present invention is to provide a method for producing a metal nitride film that has a high film formation rate and excellent productivity. The present invention provides a method for producing a metal nitride film in which a metal nitride film is formed on at least a part of a surface of a substrate to be processed by chemical vapor deposition using a metal compound raw material and a nitrogen-containing compound raw material, wherein the nitrogen-containing compound raw material contains hydrazine and ammonia.

Abstract: The object of the present invention is to provide a method for detecting the presence of liquid material which can reliably detect the presence of the liquid material stored in a liquid material storage tank without depending on the viscosity of the liquid material, and prevent process failures caused by the shortage of the liquid material supplied to a place where the liquid material is used, and the present invention provides a method for detecting the presence of liquid material in a liquid material storage tank when the liquid material filled in the liquid material storage tank is supplied to a place where the liquid material is used through a buffer tank, wherein the method includes: a flow rate-measuring step in which the flow rate of a fluid flowing through a liquid material-supplying line is continuously measured using a fluid flow meter which is fixed in the liquid material-supplying line for supplying the liquid material in the liquid material storage tank into the buffer tank; and a presence-detect

Abstract: A granular material having a high strength and a large BET specific surface area composed of porous particles comprising calcium oxide and calcium hydroxide wherein the calcium oxide is contained in an amount of 30 to 80 weight % based on a total amount of the calcium oxide and calcium hydroxide and the porous particles have a BET specific surface area of 40 m2/g or more, or composed of porous particles comprising calcium oxide, magnesium oxide, calcium hydroxide, and magnesium hydroxide wherein a ratio of an amount of magnesium to a total of an amount of calcium and an amount of magnesium is in the range of 0.05 to 0.80, a total hydroxide content in the whole particles is in the range of 1 to 20 weight % and the porous particles have a BET specific surface area of 50 m2/g or more.

Abstract: Granular calcium oxide and calcium hydroxide which are highly reactive with a halide gas and its decomposition products and favorably employable for filling a gas-fixing unit (32) of an apparatus (3) for fixing a halide gas are, respectively, a granule of porous spherical calcium oxide particles, which has a BET specific surface area of 50 m2/g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.40-0.70 mL/g and a granule of porous spherical calcium hydroxide particles which has a BET specific surface area of 20 m2/g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.25-0.40 mL/g.

Abstract: A granular material having a high strength and a large BET specific surface area composed of porous particles comprising calcium oxide and calcium hydroxide wherein the calcium oxide is contained in an amount of 30 to 80 weight % based on a total amount of the calcium oxide and calcium hydroxide and the porous particles have a BET specific surface area of 40 m2/g or more, or composed of porous particles comprising calcium oxide, magnesium oxide, calcium hydroxide, and magnesium hydroxide wherein a ratio of an amount of magnesium to a total of an amount of calcium and an amount of magnesium is in the range of 0.05 to 0.80, a total hydroxide content in the whole particles is in the range of 1 to 20 weight % and the porous particles have a BET specific surface area of 50 m2/g or more.

Abstract: An exhaust gas treatment system, which comprises: an arithmetic processing part wherein the type of gas, the flow rate and the supply time of a gas supplied to a gas-using facility are inputted as parameters, and the type of gas, the flow rate and the supply time of an additive gas is calculated based on these parameters; an additive gas supply part, which supplies an additive gas while controlling the type of gas, the flow rate and the supply time of the additive gas in accordance with indication signals sent from the arithmetic processing part; and a removal part wherein the additive gas is added to an exhaust gas exhausted from the gas-using facility, and a target compound included in the exhaust gas is removed by reacting the additive gas and the target compound included in the exhaust gas.

Abstract: In the exhaust gas treatment method of the present invention, exhaust gas in an excited state in semiconductor device production equipment is introduced into a plasma treatment unit of a treatment unit under reduced pressure, introduced into a reactor of a reaction removal unit while maintained in an excited state by plasma generated in the plasma treatment unit, and is reacted with a reaction remover composed of particulate calcium oxide filled into the reactor to remove harmful gas components in the exhaust gas. Exhaust gas may also be reacted with the reaction remover after having degraded the harmful gas components by oxidative degradation in the presence of plasma by supplying oxygen to the plasma treatment unit.

Abstract: The exhaust gas treatment agent of the present invention is an exhaust gas treatment agent provided with a particulate and porous structure, and composed of calcium hydroxide occupying at least a portion of the surface thereof, and calcium oxide occupying the remainder. The specific surface area if preferably 1 m2/g or more, and the void fraction is preferably 10 to 50% by volume. This calcium oxide is obtained by baking particulate calcium carbonate, and exhaust gas discharged from a semiconductor production device is removed of harmful gas components by allowing the exhaust gas to contact and react with this exhaust gas treatment agent while in the gaseous state.

Abstract: The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times.

Abstract: The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.

Abstract: The present invention provides a spectroscopic method for analysing objects in a gas comprising a main ingredient and the objects, both of which the absorption spectra exist in the same wavelength range, with high precision and sensitivity by using a compact and simple single cell system.

Abstract: A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly.

Abstract: In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.

Abstract: The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times.