Abstract: According to an embodiment, a capacitor includes a first electrode, a second electrode and a first via. The first electrode is provided in a first interconnect layer. The second electrode is provided in the first interconnect layer and surrounds a periphery of the first electrode by a closed circuit. The first via is connected to the first electrode and provided to pass through the first interconnect layer.

Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Abstract: A semiconductor wafer has a first element forming section, a second element forming section adjoining the first element forming section, and a third element forming section adjoining the second element forming section. The first element forming section has a first supporting substrate, a first buried insulating film formed on the first supporting substrate, and a first active layer formed on the first buried insulating film. The second element forming section has a second supporting substrate, a second buried insulating film formed on the second supporting substrate, and a second active layer formed on the second buried insulating film. The second active layer has a thickness being different from a thickness of the first active layer. The third element forming section has a third active layer.

Abstract: A semiconductor wafer has a first element forming section, a second element forming section adjoining the first element forming section, and a third element forming section adjoining the second element forming section. The first element forming section has a first supporting substrate, a first buried insulating film formed on the first supporting substrate, and a first active layer formed on the first buried insulating film. The second element forming section has a second supporting substrate, a second buried insulating film formed on the second supporting substrate, and a second active layer formed on the second buried insulating film. The second active layer has a thickness being different from a thickness of the first active layer. The third element forming section has a third active layer.

Abstract: A hetero-bipolar transistor comprises: a first-conductive-type Si semiconductor substrate layer; a first Si1-xGex layer (0<x<1) formed on the first-conductive-type Si semiconductor substrate, the first Si1-xGex layer being doped with a first-conductive-type impurity; a second Si1-xGex layer formed on the first Si1-xGex layer, the second Si1-xGex layer being doped with a second-conductive-type impurity; and a Si layer formed on the second Si1-xGex layer, the Si layer being doped with the first-conductive-type impurity by a concentration higher than that of the second-conductive-type impurity.