Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.

Abstract: An etching method capable of increasing the selectivity of a polysilicon film to a silicon oxide film and suppressing recess formation on a silicon base layer. That part of the polysilicon film of a wafer transferred into a processing vessel which is exposed through an opening is etched so as to slightly remain on a gate oxide film. The pressure in a processing space is set to 66.7 Pa, HBr gas and He gas are supplied to the processing space, and a microwave of 2.45 GHz is supplied to a radial line slot antenna. The polysilicon film is etched by plasma generated from the HBr gas so as to be completely removed, the exposed gate oxide film is etched, and a resist film and an anti-reflection film are etched.

Abstract: A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface of the mask is enlarged compared to opening dimensions of the top and the bottom surface of the mask and etching the silicon layer by using a halogen containing gas. A gaseous mixture containing HBr gas, NF3 gas and O2 gas is used as the halogen containing gas. A hole or a trench having an opening diameter or an opening width equal to or smaller than 0.2 ?m is formed in the etching target layer. Further, a hole or a trench having an aspect ratio equal to or greater than forty is formed in the etching target layer.

Abstract: A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

Abstract: A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and a bottom surface of the mask is enlarged compared to opening dimensions of the top and the bottom surface of the mask and etching the silicon layer by using a halogen containing gas. A gaseous mixture containing HBr gas, NF3 gas and O2 gas is used as the halogen containing gas. A hole or a trench having an opening diameter or an opening width equal to or smaller than 0.2 ?m is formed in the etching target layer. Further, a hole or a trench having an aspect ratio equal to or greater than forty is formed in the etching target layer.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: When etching a silicon layer 210 with a processing gas containing a mixed gas constituted of HBr gas, and O2 gas and SiF4 gas and further mixed with both of or either of SF6 gas and NF3 gas by using a pre-patterned mask having a silicon oxide film layer 204 inside an airtight processing container 102, high-frequency power with a first frequency is applied from a first high-frequency source 118 and high-frequency power with a second frequency lower than the first frequency is applied from a second high-frequency source 138 to a lower electrode 104 on which a workpiece is placed. Through this etching process, holes or grooves achieving a high aspect ratio are formed in a desirable shape at the silicon layer.

Abstract: In a plasma processing method, a silicon layer of an object to be processed is etched by using a plasma of a processing gas introduced into an airtight processing chamber through a patterned mask. The processing gas contains a gaseous mixture of HBr, O2 and SiF4 and, additionally, one or both of SF6 gas and NF3 gas; and a gas containing C and F is further added to the processing gas.

Abstract: A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

Abstract: A focus ring for a plasma processing apparatus has an inner region (12a), middle region (12b), and outer region (12c), disposed in this order from the inner side to surround a target substrate (W). On the side to be exposed to plasma, the surfaces of the inner region (12a) and outer region (12c) consist essentially of a dielectric, while the surface of the middle region (12b) consists essentially of a conductor. The middle region (12b) is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate (W). If there is no middle region (12b), the peak of plasma density appears substantially directly above the peripheral edge of the target substrate (W).