Abstract: A piezoelectric bulk wave device includes a support including a support substrate, a piezoelectric layer on the support and including first and second principal surfaces, an IDT electrode on the first principal surface and including a pair of comb-shaped electrodes each including electrode fingers and a busbar connecting the electrode fingers, and a frequency adjustment film on the second principal surface and overlapping at least a portion of the IDT electrode. The support includes a hollow portion overlapping at least a portion of the IDT electrode. d/p is less than or equal to about 0.5. Via holes are provided to the piezoelectric layer and the frequency adjustment film. Wiring electrodes are provided in the via holes and on the frequency adjustment film and electrically connected to the busbars of the comb-shaped electrodes.

Abstract: A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

Abstract: A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

Abstract: A circuit device includes a regulator, a charge pump circuit, an overvoltage detection circuit, and a control circuit. The regulator regulates a power supply voltage. The charge pump circuit outputs, a gate control voltage, to a gate node of an N-type transistor provided between a power supply node and a load, based on a regulated voltage. The overvoltage detection circuit detects an overvoltage of the regulated voltage. The control circuit controls to stop the charge pump circuit when the overvoltage is detected by the overvoltage detection circuit.

Abstract: An integrated circuit device includes a heating element, and a control circuit configured to control flow of a current through the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side. An outer shape of the heating element has a short side and a long side. A distance between the long side of the heating element and the first side of the integrated circuit device is larger than a distance between the short side of the heating element and the second side of the integrated circuit device.

Abstract: An integrated circuit device includes a heating element, and a temperature sensor configured to detect a temperature of the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side, and when a direction along the first side of the integrated circuit device is set as an X direction and a direction along the second side is set as a Y direction, the heating element includes a first heating element, and a second heating element arranged adjacent to the first heating element along the Y direction with a region AR interposed therebetween. The temperature sensor is arranged at an arrangement position where a position in the X direction is a position between a center of the region AR and the second side, and a position in the Y direction is a position between the first heating element and the second heating element.

Abstract: A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

Abstract: A circuit device includes a regulator, a charge pump circuit, an overvoltage detection circuit, and a control circuit. The regulator regulates a power supply voltage. The charge pump circuit outputs, a gate control voltage, to a gate node of an N-type transistor provided between a power supply node and a load, based on a regulated voltage. The overvoltage detection circuit detects an overvoltage of the regulated voltage. The control circuit controls to stop the charge pump circuit when the overvoltage is detected by the overvoltage detection circuit.

Abstract: A power supply control device that controls a switching element of a switching power supply apparatus which includes a transformer having a primary winding, a secondary winding, and an auxiliary winding, the switching element coupled to the primary winding, and a capacitor coupled to the auxiliary winding, includes: a power supply terminal coupled to one end of the capacitor; a switch and a resistor coupled in series between the power supply terminal and a ground; a first control circuit that controls the switch; and a second control circuit that controls the switching element, in which the first control circuit performs control to turn on the switch when a first voltage applied to the power supply terminal continuously exceeds a first reference voltage for a first time, and the second control circuit performs control to turn off the switching element when the first voltage exceeds a second reference voltage higher than the first reference voltage.

Abstract: A power supply control device includes a charge circuit, a detection circuit, and a charge control circuit. The charge circuit charges a capacitor coupled to a power supply voltage node based on a full-wave rectified voltage. The charge control circuit enables a charge mode of the charge circuit when the detection circuit detects that a power supply voltage is less than a first threshold voltage. The charge control circuit disables the charge mode when the detection circuit detects that the power supply voltage reached a second threshold voltage. The charge control circuit sets a charge capacity of the charge circuit in a second charge mode period according to a length of a first charge mode period.

Abstract: A power supply control device includes a charge circuit charging a capacitor coupled to a second node with a full-wave rectified voltage input into a first node when activated, a first detection circuit detecting if the first node is less than a first voltage, a second detection circuit detecting if the second node is less than a second voltage and if the second node is equal to or higher than a third voltage higher than the second voltage, a discharge circuit discharging an electric charge accumulated in the first node by activation, and a control circuit activating the charge circuit when the voltage of the first node is less than the first voltage, activates the discharge circuit when the second node is less than the second voltage, and deactivates the discharge circuit when the voltage of the second node is equal to or higher than the third voltage.

Abstract: Since CPUs of the von Neumann-architecture computers perform sequential processing, comparison operations causing the combinatorial explosion lead to a very large volume of computing, making it difficult to speed up the processing even with high-performance processors.

Abstract: A power supply control device includes a charge circuit, a detection circuit, and a charge control circuit. The charge circuit charges a capacitor coupled to a power supply voltage node based on a full-wave rectified voltage. The charge control circuit enables a charge mode of the charge circuit when the detection circuit detects that a power supply voltage is less than a first threshold voltage. The charge control circuit disables the charge mode when the detection circuit detects that the power supply voltage reached a second threshold voltage. The charge control circuit sets a charge capacity of the charge circuit in a second charge mode period according to a length of a first charge mode period.

Abstract: A power supply control device includes a charge circuit charging a capacitor coupled to a second node with a full-wave rectified voltage input into a first node when activated, a first detection circuit detecting if the first node is less than a first voltage, a second detection circuit detecting if the second node is less than a second voltage and if the second node is equal to or higher than a third voltage higher than the second voltage, a discharge circuit discharging an electric charge accumulated in the first node by activation, and a control circuit activating the charge circuit when the voltage of the first node is less than the first voltage, activates the discharge circuit when the second node is less than the second voltage, and deactivates the discharge circuit when the voltage of the second node is equal to or higher than the third voltage.

Abstract: With an IC including a driver that drives a large current, its characteristics may be deteriorated or the IC may be broken by heat generated by the large current. By providing a plurality of sensors and disposing some of the sensors so as to be close to an output driver that flows a large current, which is a source of heat generation, an increase in the temperature of the IC can be rapidly detected, and the deterioration of the characteristics of the IC can be prevented by accurately actuating an overheating protection function based on a result of detection. Alternatively, breakage of the IC can be prevented by suppressing overheating.

Abstract: A motor drive circuit which drives a motor, includes a driving unit that supplies a drive current to the motor on the basis of a control signal, an amplification unit that amplifies a potential difference between a first node of a wire, through which at least a portion of the drive current flows, and a second node of the wire, and a controller that generates the control signal on the basis of comparison between the potential difference amplified by the amplification unit and a threshold voltage.

Abstract: Provided is a circuit device in which reduction of power consumption, reduction of the number of parts, and the like can be realized by eliminating the need for a sense resistor. The circuit device includes a bridge circuit, and a control circuit configured to compare a reference voltage VR and a detection voltage V2 (V1) set using the on-current and the on-resistance of at least one of a low-side transistor and a high-side transistor, output a detection result, control switching on and off of transistors in the bridge circuit, and perform switching from a charge period to a decay period.

Abstract: A motor drive circuit which drives a motor, includes a driving unit that supplies a drive current to the motor on the basis of a control signal, an amplification unit that amplifies a potential difference between a first node of a wire, through which at least a portion of the drive current flows, and a second node of the wire, and a controller that generates the control signal on the basis of comparison between the potential difference amplified by the amplification unit and a threshold voltage.

Abstract: An output transistor of an output circuit that outputs a large current may have a partial fault, but such a partial fault may not be detected because the transistor is very large. To address this, the invention provides an output circuit in which one output transistor is divided into a plurality of transistors, and a plurality of pads that are connected correspondingly to the transistors are provided. Fault detection can be performed on the plurality of transistors by using each pad. At least some of the pads are connected to one same output terminal of the substrate or the like.

Abstract: CPUs are not effective for search processing for information on a memory. Content-addressable memories (CAMs) are effective for information searches, but it is difficult to build a large-capacity memory usable for big data using the CAMs. A large-capacity memory may be turned into an active memory having an information search capability comparable to that of a content-addressable memory (CAM) by incorporating an extremely small, single-bit-based parallel logical operation unit into a common memory. With this memory, a super fast in-memory database capable of fully parallel searches may be realized.