Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500?·cm or higher.

Abstract: A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%).

Abstract: A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film deposition method and apparatus. Thus, the cost of raw materials and the cost of waste treatments are reduced to attain a considerable reduction in production cost. After a metallic base electrode layer 1B and a light absorption layer 1C are formed in this order on a glass substrate 1A, a high-resistance buffer layer 1D and a window layer 1E are successively formed in this order in a multi layer arrangement on the light absorption layer 1C of the resultant semifinished solar cell substrate by the MOCVD method. Consequently, a film deposition method and apparatus are simplified and the cost of raw materials and the cost of waste treatments can be reduced.

Abstract: Provided are a terminal box, which protects a lead line of a frameless solar cell module from external moisture and the like and easily connects the solar cell modules to each other, and an attaching structure of a solar cell module having such a terminal box attached thereto. The terminal box is provided for a frameless solar cell having no frame for protecting a substrate glass and a cover glass from external forces. The terminal box is connected to an electrode for taking out power generated by receiving light, and a lead line for outputting the power to the outside is led out from an end portion of the solar cell module. The terminal box includes: a bonding section to be bonded to a side end portion of the solar cell module; an output terminal, which is electrically connected to the lead line to output the power obtained from the electrode of the solar cell module to the outside through the lead line; and a connecting section for connecting the terminal box to a prescribed external connector.

Abstract: Before a buffer layer deposition step P5, a pre-rinse step P4 is provided to remove deposits deposited on the surface of a CIS-based light absorbing layer 3D. Thus, the disturbing factors of the formation reaction of the buffer layer are removed, thereby to improve the coverage of the buffer layer, and to hold the transparency thereof. In addition, a rinse step P6 is provided after the step P5. Thus, the colloidal solid matter remaining on the buffer layer surface is cleaned and removed with a rinse solution, thereby to hold the high resistivity. The rinse solution from a second rinse tank of the step P6 is re-used. After the step P6, a draining/drying step P7 is provided. After drying, an n-type window layer (transparent conductive film) is deposited.

Abstract: A photovoltaic module having long-term durability is obtained at low cost. A CIS based thin-film photovoltaic module 1 is obtained by bonding a cover glass 4 comprising, e.g., a semi-tempered white flat glass, which is inexpensive and durable, to a CIS based thin-film photovoltaic circuit 2 on a glass substrate 2A with a thermally crosslinked ethylene vinyl acetate (hereinafter referred to as EVA) resin film 3 (or sheet) as an adhesive. Use of the EVA resin film 3 reduces the amount of an EVA resin to be used. In the crosslinking, a gas generating from the EVA resin film is removed by vacuum suction to prevent bubble generation or inclusion, etc. A high-capacity storage capacitor 9 is disposed on that side of the glass substrate which is opposite to the circuit side to store the electricity optically generated by the circuit.

Abstract: In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500 ?·cm or higher.

Abstract: There are provided a frameless solar cell module and a manufacturing method thereof, in which the frameless solar cell module includes a sub-module including a substrate glass, a thin-film solar cell device formed on the substrate glass, a cover glass attached to a light receiving surface side of the thin-film solar cell device, and a filler for adhering and holding the substrate glass and the cover glass, and is characterized in that lamination surfaces at side ends of the sub-module are sealed with a metal sealing material.

Abstract: Before a buffer layer deposition step P5, a pre-rinse step P4 is provided to remove deposits deposited on the surface of a CIS-based light absorbing layer 3D. Thus, the disturbing factors of the formation reaction of the buffer layer are removed, thereby to improve the coverage of the buffer layer, and to hold the transparency thereof. In addition, a rinse step P6 is provided after the step P5. Thus, the colloidal solid matter remaining on the buffer layer surface is cleaned and removed with a rinse solution, thereby to hold the high resistivity. The rinse solution from a second rinse tank of the step P6 is re-used. After the step P6, a draining/drying step P7 is provided. After drying, an n-type window layer (transparent conductive film) is deposited.

Abstract: A problem of the invention is to prevent a substrate from being damaged with a metal stylus upon mechanical patterning.

Abstract: A photovoltaic module having long-term durability is obtained at low cost. A CIS based thin-film photovoltaic module 1 is obtained by bonding a cover glass 4 comprising, e.g., a semi-tempered white flat glass, which is inexpensive and durable, to a CIS based thin-film photovoltaic circuit 2 on a glass substrate 2A with a thermally crosslinked ethylene vinyl acetate (hereinafter referred to as EVA) resin film 3 (or sheet) as an adhesive. Use of the EVA resin film 3 reduces the amount of an EVA resin to be used. In the crosslinking, a gas generating from the EVA resin film is removed by vacuum suction to prevent bubble generation or inclusion, etc. A high-capacity storage capacitor 9 is disposed on that side of the glass substrate which is opposite to the circuit side to store the electricity optically generated by the circuit.

Abstract: A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film deposition method and apparatus. Thus, the cost of raw materials and the cost of waste treatments are reduced to attain a considerable reduction in production cost. After a metallic base electrode layer 1B and a light absorption layer 1C are formed in this order on a glass substrate 1A, a high-resistance buffer layer 1D and a window layer 1E are successively formed in this order in a multi layer arrangement on the light absorption layer 1C of the resultant semifinished solar cell substrate by the MOCVD method. Consequently, a film deposition method and apparatus are simplified and the cost of raw materials and the cost of waste treatments can be reduced.

Abstract: The property of CIS based thin-film solar cell modules that the modules recover their conversion efficiency, etc. upon irradiation with a weak light is correctly evaluated. A CIS based thin-film solar cell module is subjected to a conventional damp heat test with a constant-light solar simulator (solar simulator) 1D in such a manner that the power of the light source 1E is regulated so that the solar simulator 1D emits a weak light corresponding to the amount of solar radiation in cloudy weather, i.e., resulting in an irradiance of 100-300 W/m2, and the module is continuously irradiated with the weak light throughout the test period under the same temperature, humidity, and storage period conditions as those in the conventional conditions for the test (1,000-hour storage in the dark at a temperature of 85° C. and a relative humidity of 85%).

Abstract: The tin-free air side of each of float-processed soda-lime float glass substrates is quickly and accurately distinguished, and the substrates are arranged, with the air sides facing upward. CIS based thin-film photo voltaic devices are formed on the air sides to improve conversion efficiency and yield and reduce production cost. A surface of a glass substrate is irradiated with ultra violet lights. When fluorescence occurs, this side is judged to be the tin-containing float side B (P1) and a tin containment mark is put thereon (P2). When the upper side is the air side A not bearing a tin containment mark, this substrate is subjected as it is to a cleaning/drying step and to the formation of a CIS based thin-film photo voltaic device on the air side A. When the upper side is the float side B, this substrate is turned over (P3) and then subjected to a cleaning/drying step (P4) and to the formation of a CIS based thin-film photo voltaic device on the upper side, i.e., the air side A (P5).

Abstract: This invention provides a CIS-based thin film solar battery and a process for producing the same in which the formation of an alkali barrier layer and a metal backside electrode layer is carried out at a low cost in a short time to prevent such an unfavorable phenomenon that a light absorbing layer is separated from the interface of the light absorbing layer and the metal backside electrode layer. The CIS-based thin film solar battery (1) comprises a glass substrate (2), an alkali-free layer (7) such as silica, a metal backside electrode layer (3) having a laminate structure, a p-type CIS-based light absorbing layer (4), a high-resistance buffer layer (5), and an n-type window layer (6) stacked in that order. The layer (7), either alone or together with a first layer (3a) in the layer (3), can function as an alkali barrier layer (8) that can prevent and control the thermal diffusion of an alkali component into the light absorbing layer during the formation of the layer (4) from the substrate (2).